SANYO TS7994 Datasheet

Ordering number :EN5962

20.0

1.2

2.0

3.4

ø3.3

0.6

5.0

1.0

2.0

20.7

26.0

12

3

5.455.45

2.8

6.0

NPN Triple Diffused Planar Silicon Transistor

TS7994

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

• High speed.

• High breakdown voltage (V

CBO

=1600V).

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotctelloCV

egatloVrettimE-ot-rotctelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2048B-TO3PBL

[TS7994]

1:Base
2:Collector

3:Emitter
SANYO:TO-3PBL

OBC
OEC
OBE

PC

C˚52=cT 012W

0061V
008V
6V
52A
05A

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

egatloVniatsuSrotcelloC

tnerruCffotuCrettimE

tnerruCffotuCrotcelloCI

niaGtnerruCCD

egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV

emiTegarotSt

emiTllaFt

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

sgnitaR

nimpytxam

V

SEC

V

OEC

I

OBE
OBC

h
h

gts

f

EC

I

)SUS(

C

V

BE

V

BC

V

)1(EF

EC

V

)2(EF

EC

I

)tas(EC

C

I

)tas(EB

C

I

C

I

C

R,V0061=

0=0.1Am

EB

I,Am001=

0=008V

B

I,V4=

0=0.1Am

C

I,V008=

0=01Aµ

E

I,V5=

A0.1=5103

C

I,V5=

A81=47

C

I,A81=

A5.4=5V

B

I,A81=

A5.4=5.1

B

I,A51=
I,A51=

I,A5.2=

1B

I,A5.2=

1B

A52.6–=0.3

2B

A52.6–=2.0sµ

2B

tinU

V

sµ

42498TS (KOTO) TA-1622 No.5962-1/3

0

Switching Time T est Circuit

TS7994

PW=20µs
DC≤1%

INPUT

V

50Ω

VBE=–2V

30

25

–A

20

C

15

10

Collerctor Current, I

5

I

B1

I

B2

R

B

R

100µF

+

IC-

470µF

V

+

VCC=200V

CE

10.0A

OUTPUT

RL=13.3Ω

8.0A

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0.5A

25

VCE=5V

20

–A

C

15

10

Collerctor Current, I

5

IC-

V

BE

Ta=120˚C

25˚C

40˚C

–

0

024681013579

Collector-to-Emitter Voltage, VCE–V

100

7
5

Ta=120˚C

3

FE

2

10

7
5

DC Current Gain, h

3
2

1.0

0.1

25˚C

–

40˚C

357

23557

hFE-

1.0

I

C

232

10

Collector Current, IC–A

– µs

Switching Time, SW Time

10

7
5

3
2

1.0
7
5

3
2

VCC=200V
I

C

0.1

I

B2

7

R

5

7

SW Time

/

IB1=6

/

IB1=2.5

load

0.1

3357

23557

1.0

-

I

C

t

stg

t

f

22

10

Collector Current, IC–A

=

I

0

B

VCE=5V

0

0 0.2 0.4 0.6 0.8 1.0 1.2

10

I

/

IB=5

C

7
5

3

–V

2

1.0

CE(sat)

7
5

3
2

Ta=–40˚C

0.1
7

120

˚C

5
3

Collector-to-Emitter

Saturation Voltage, V

2

0.01
232357

0.1

10

7
5

– µs

3
2

1.0
7
5

3
2

Switching Time, SW Time

0.1
7

5

Base-to-Emitter Voltage, V

˚C

25

357

V

1.0

CE(sat

-

)

2

Collector Current, I

SW Time

1.00.1

Base Current, IB2–A

–V

BE

I

C

10

–A

C

-

I

B2

t

stg

t

f

357

235772 2

57

VCC=200V
I

=15A

C

I

=2.5A

B1

R load

10

10

No.5962-2/3