SANYO TS7988 Datasheet
TS7988
Ordering number :EN5959
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Triple Diffused Planar Silicon Transistor
16.0
2.0
2.8
1.0
4.0
21.0
5.0
8.0
22.0
20.4
5.6
3.1
2.0
2.0
0.6
5.45
5.45
12
3
3.5
ø3.4
Features
• High speed.
• High breakdown voltage (V
CBO
=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotctelloCV
egatloVrettimE-ot-rotctelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2039D-TO3PML
[TS7988]
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
OBC
OEC
OBE
PC
C˚52=cT 07W
0061V
008V
6V
01A
52A
0.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrotcelloCI
egatloVniatsuSrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCD
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-B
emiTegarotSt
emiTllaFt
V
h
h
V
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
V
)1(EF
V
)2(EF
I
)tas(EC
C
I
)tas(EB
C
I
gts
C
I
f
C
I,V008=
EC
EC
BE
EC
EC
0=01Aµ
E
R,V0061=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,V5=
A0.1=5103
C
I,V5=
A7=47
C
I,A7=
A57.1=5V
B
I,A7=
A57.1=5.1
B
I,A6=
I,A6=
I,A0.1=
1B
1B
A5.2–=0.3sµ
2B
I,A0.1=
A5.2–=2.0sµ
2B
42498TS (KOTO) TA-1619 No.5959-1/3
sgnitaR
nimpytxam
tinU
V
Switching Time T est Circuit
TS7988
PW=20µs
DC≤1%
INPUT
50Ω
10
9
8
7
6
5
4
3
Collerctor Current, IC –A
2
1
0
024681013579
V
R
VBE=–2V
I
B1
I
B2
R
B
100µF
IC-
OUTPUT
RL=33.3Ω
+
2.0A
470µF
V
CE
+
VCC=200V
1.6A
1.8A
1.4A
Collector-to-Emitter Voltage, VCE–V Base-to-Emitter Voltage, VBE–V
100
7
5
Ta=120˚C
3
FE
2
10
7
5
DC Current Gain, h
3
2
1.0
0.1
7
5
3
– µs
2
1.0
7
5
3
2
Switching Time, SW Time
0.1
7
7
25˚C
–
40˚C
2357
VCC=200V, R
I
/
IB1=6, I
C
B2
2357
0.1
hFE-
357
Collector Current, IC– A Collector Current, IC–A
SW Time
load
/
IB1=2.5
357
Collector Current, I
I
C
2
1.0
-
I
C
t
stg
t
f
22
1.0
C
–A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
I
0
B
=
VCE=5V
10
Collector-to-Emitter
10
IC-
V
Ta=120˚C
-
)
1.0
t
stg
t
f
1.00.1
-
BE
25˚C
I
C
I
40˚C
–
2
B2
235772
10
VCE=5V
9
8
7
6
5
4
3
Collerctor Current, IC –A
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V
CE(sat
357
SW Time
load
–V
CE(sat)
Saturation Voltage, V
– µs
Switching Time, SW Time
10
I
/
C
7
5
3
2
1.0
7
5
3
2
Ta=–40˚C
0.1
7
5
120
3
2
0.01
0.1
10
7
5
3
2
1.0
7
5
3
2
VCC=200V, R
0.1
IC=6A, IB1=1A
7
IB=5
25˚C
˚C
2357
Base Current, IB2–A
357
No.5959-2/3
10
10
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