Sanyo TS4162 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

VHF Band Low-Noise Amplifier

and OSC Applications

Ordering number:ENN5436A

TS4162

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.8

0.4

0.4

2

3

1.6

0.2

1.6

0.3

0.5 0.5

1

0.75

0.6

0 to 0.1

0.1

0.1max

Features

· Low noise : NF=1.8dB typ (f=150MHz).

· High gain : S21e2=16dB typ (f=150MHz).

· Ultrasmall package facilitates miniaturization in end
products

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2106A

[TS4162]

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

C

1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP

02V
21V
2V
05Am
001Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaG

ecnaticapaCtuptuOboCV

ecnaticapaCrefsnarTesreveRerCV

niaGrefsnarTdrawroF|e12S|

erugiFesioN

hEF1VECI,V2=
hEF2VECI,V2=

V

OBC

V

OBE

f

V

T

2

V

FNVECI,V2=

I,V01=

BC
BE

EC
BC
BC
EC

0=0.1Aµ

E

I,V1=

0=01Aµ

C

Am3=

C

Am05=

C

I,V2=

Am3=

C

zHM1=f,V01=
zHM1=f,V01=

I,V2=

C
C

zHM051=f,Am3=
zHM051=f,Am3=8.10.3Bd

Marking : MA

sgnitaR

nimpytxam

08002
07

0.17.1zHG

1.18.1Fp

8.0Fp

3161Bd

tinU

92500TS (KOTO) TA-2789 No.5436–1/5

TS4162

FE

100

DC Current Gain, h

10

1.0

3

2

7

5

3

2

35

5

3

2

7
5

hFE -- I

23 57

1.0

Collector Current, IC–mA

Cob -- V

C

10

CB

V

23 577

CE

f=1MHz

=2V

1V

IT02105

2

10

– GHz

7

T

5

3

2

1.0
7

5

Gain-Bandwidth Product, f

3

7235723 57

Collector Current, IC–mA

5

3

2

1.0
7
5

f

-- I

T

Cre -- V

C

101.0

CB

=2V

V

CE

1V

IT02106

f=1MHz

2

3

2

Output Capacitance, Cob – pF

0.1
7

0.1 1.0

32

28

–dB

24

20

16

12

8

4

Forward Transfer Gain, S21e

0

35

120

100

Collector-to-Base Voltage, VCB-- V

S21e

2

23 5723 57

V

-- I

CE

C

=2V

1V

1.0

Collector Current, IC–mA

75327

10 100

P

-- Ta

C

10

IT02107

f=150MHz

7532

IT02109

3

2

Reverse Transfer Capacitance, Cre – pF

32

0.1
7

0.1 1.0

Collector-to-Base Voltage, VCB-- V

12

10

8

6

4

NF -- I

23 5723 57

10

32

IT02108

C

f=150MHz

Noise Figure, NF – dB

2

V

=2V

CE

1V

0

72

1.0 10

Collector Current, IC–mA

723 5

3

5

IT02110

7

100

– mW

80

C

60

40

20

Collector Dissipation, P

0

0 16014012010080604020

Ambient Temperature, Ta – °C

IT02111

No.5436–2/5