Sanyo TND010F Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

ExPD (Excellent Power Device)

Lamp-, solenoid-, and motor-driving Applications

Ordering number:ENN6032A

TND010F

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· N-channel MOSFET built in.

· Overheat protection.

· Overcurrent protection.

· Overvoltage protection.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

)egarevA(tnerruCtuptuOI

egatloVtupnIV

noitapissiDrewoPelbawollAP

erutarepmeTgnitarepOrpoT 051+ot04–

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

SD

O

D

Package Dimensions

unit:mm

2154

[TND010F]

10.5

1.0

1.2

0.5

123

2.5 2.5

)CD( 05V

)CD( 5.1A

NI

1.6

4.5

1.9

8.5

7.5

2.6

1.2

1.4

0.5

1 : GND
2 : OUT
3 : IN
SANYO : FLP

01+ot3.0–V

5.1W

˚C
˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVpmalCecruoS-ot-niarDV

tnerruCFFO-tuptuO

egatloVdlohserhTtupnI

ecnatsiseRNOecruoS-ot-niarDR

pmalcVNII,0=

SD

I

)1(VNIV,0=

SSD

I

)2(VNIV,0=

SSD

VNI)ht(VSDI,V5=

)no(VNII,V5=

SD

Am1=05V

O

V05=001Aµ

SD

V21=

SD

Am1=

O

A1=

O

12501TS TA-3180/51099TS (KOTO) TA-1741 No.6032–1/4

sgnitaR

nimpytxam

01Aµ

0.15.2V

2.0

tinU

Ω

Continued on next page.

TND010F

Continued from preceding page.

retemaraPlobmySsnoitidnoC

tnerruCtupnINO-tuptuOI

erutarepmeTgnitceteDtaehrevO)ds(jTVNII,V5=

tnerruCgnitceteDtnerrucrevO

egatloVpmalCtupnI

V

NI

VNIV5=52.06.0Am

NI

sIVNIV5=

pmalcINIAm5=

A1=551561

O

nimpytxam

5.125.2A

01V

*Note:

1.Shutdown state will be kept after overheat and overcurrent protections operation and the system will be reset when
the input voltage goes to or below the reset voltage (1.0V).

2.Overheat detecting temperature value is not a guarantee value but for reference only.

Block Diagram

OUT

sgnitaR

tinU

˚C

IN

– Ω

DS(on)

0.3

0.25

0.2

0.15

0.1

0.05

ESD

protection

Overcurrent

protection

Overheat

protection

R

DS(on)

IN

V

Gate shutdown

=4V

Overvoltage

protection

Latch

GND

-

Ta R

IO=1A IO=1A

5V

6V

– Ω

DS(on)

0.3

0.25

0.2

0.15

0.1

0.05

DS(on)

-

V

IN

Ta=85°C

25°C

–40°C

0

Drain-to-Source ON Resistance, R

-25 0 25 50 75 100 125 150-50

Ambient Temperature, Ta – ˚C

-

Ta

–mA

0.6

0.5

0.4

I

IN

IN

0.3

0.2

Input Current, I

0.1

0

-50-250 255075 150125100

Ambient Temperature, Ta – ˚C

VIN=5V

0

Drain-to-Source ON Resistance, R

012345678910

Input Voltage, VIN–V

I

-

1.0

0.9

0.8

0.7

–mA

0.6

IN

0.5

0.4

0.3

Input Current, I

0.2

0.1
0

01234 675118109

IN

Protection operation

Normal operation

V

IN

Ta=25°C

Input Voltage, VIN–V

No.6032–2/4