Ordering number : ENN7167
TIG002SS
N-Channel IGBT
TIG002SS
Light-Controlling Strobe Applications
Features
•
Low-saturation voltage.
•
4V drive.
• Enhansment type.
Specifications
Package Dimensions
unit : mm
2203
[TIG002SS]
58
14
5.0
1.8max
1.5
0.595
1.27
0.43
0.1
0.3
4.4
6.0
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
0.2
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Emitter Voltage V
Gate-to-Emitter Voltage (DC) V
Gate-to-Emitter Voltage (Pulse) V
Collector Current (Pulse) I
Channel T emperature T ch 150 °C
Storage T emperature Tstg --40 to +150 °C
CES
GES
GES
CP
PW≤500µs, duty cycle≤0.5% 150 A
400 V
±6V
±8V
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector-to-Emitter Breakdown Voltage V
Collector-to-Emitter Cutoff Current I
Gate-to-Emitter Leakage Current I
Gate-to-Emitter Cutoff Voltage VGE(off) VCE=10V, IC=1mA 0.5 1.2 V
Collector-to-Emitter Saturation Voltage
Input Capacitance Cies VCE=10V , f=1MHz 3300 pF
Output Capacitance Coes VCE=10V , f=1MHz 75 pF
Reverse Transfer Capacitance Cres VCE=10V , f=1MHz 40 pF
(Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and emitter.
(BR)CESIC
CES
GES
VCE(sat)1 IC=150A, VGE=4V 4.2 5.5 V
VCE(sat)2 IC=60A, VGE=2.5V 2.4 3.4 V
=5mA, VGE=0 400 V
VCE=320V, VGE=0 10 µA
VGE=±6V, VCE=0 ±100 nA
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3515
No.7167-1/3
Unit
Eleclrical Connection
TIG002SS
C8C7C6C
1E2E3E4
200
180
160
-- A
140
C
120
100
80
60
Collector Current, I
40
20
Tc=25
0
0
°C
12345
Collector-to-Emitter Voltage, V
5.0
Tc=25°C
4.5
V
--
4.0
CE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Collector-to-Emitter Voltage, V
0
0123456
Gate-to-Emitter V oltage, VGE -- V
1.2
V
--
1.0
(off)
5
G
IC -- V
VCE -- V
CE
GE
VGE(off) -- Tc
CE --
5V
3V
VGE=2V
V
IT04213
IC=150A
120A
90A
60A
IT04215
VCE=10V
IC=1mA
GE
0.8
0.6
0.4
4V
180
Tc=25°C
VCE=5V
160
140
-- A
120
C
100
80
60
Collector Current, I
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IC -- V
GE
Gate-to-Emitter V oltage, VGE -- V
10000
7
5
3
2
1000
-- pF
7
5
3
2
100
7
Cies, Coes, Cres
5
3
2
10
0404515 2010 30 35255
Cies, Coes, Cres -- V
Cies
Coes
Cres
CE
Collector-to-Emitter Voltage, VCE -- V
VCE(sat) -- Tc
=150A
C
=4.0V, I
V
GE
V
GE
=2.5V, I
C
=60A
(sat) -- V
CE
7
6
5
4
3
2
IT04214
IT04216
0.2
Gate-to-Emitter Cutoff Voltage, V
0
0 50 75 100 125 15025--25--50
Case Temperature, Tc -- °C
IT04217
Collector-to-Emitter
Saturation V oltage, V
1
0
0 50 75 100 125 15025--25--50
Case Temperature, Tc -- °C
IT04218
No.7167-2/3