Ordering number : ENA1343
TF202FC
SANYO Semiconductors
DATA SHEET
N-channel Silicon Juncton FET
TF202FC
Electret Condenser Microphone
Applications
Features
• Ultrasmall package facilitates miniaturization in end products.
•
Especially suited for use in electret condenser microphone for audio equipments and telephones.
•
Excellent voltage characteristics.
•
Excellent transient characteristics.
•
Adoption of FBET process.
•
Halogen free compliance.
Specifi cations
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
Junction Temperature Tj 150
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics
at Ta=25°C
GDO
G
D
D
at T a=25°C
--20 V
10 mA
1mA
100 mW
C
°
Parameter Symbol Conditions
Gate-to-Drain Breakdown Voltage V
Cutoff Voltage VGS(off) VDS=5V, ID=1μA --0.2 --0.6 --1.0 V
Marking : E Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
(BR)GDOIG
=--100μA --20 V
min typ max
Ratings
Unit
www.semiconductor-sanyo.com/network
O2208GB MS IM TC-00001090
No.A1343-1/3
Continued from preceding page.
Parameter Symbol Conditions
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specifi ed Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
I
DSS
yfs
|
|
Ciss VDS=5V, VGS=0V, f=1MHz 3.5 pF
Crss VDS=5V, VGS=0V, f=1MHz 0.65 pF
G
V
G
Δ
VV
Gvf f=1kHz to 110Hz --1.0 dB
Δ
THD VIN=30mV, f=1kHz 1.2 %
V
NO
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz 0.5 1.0 mS
VIN=10mV, f=1kHz --3.0 dB
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V --1.2 --3.5 dB
VIN=0V, A Curve --
TF202FC
Ratings
min typ max
140* 350*
110
Unit
μ
dB
A
* : The TF202FC is classifi ed by I
Rank 4 5
I
DSS
140 to 240 210 to 350
as follows : (unit : μA)
DSS
Package Dimensions Test Circuit
unit : mm (typ)
7029-004
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
1.4
0.25
0.8
0.3 0.3
3
1
0.45
2
1
3
B o tto m View
2
0.2
0.1
0.6
0.070.07
1 : Drain
2 : Source
3 : Gate
SANYO : SSFP
15pF
OSC
1kΩ
33μF
+
VTVM
VCC=4.5V
VCC=1.5V
V
THD
AB
Output Impedance
V
-- I
NO
-- dB
--110
--112
NO
--114
--116
--118
Output Noise Voltage, V
--120
7
100
23 57
Drain Current, I
DSS
VNO : VCC=4.5V
VIN=0, ACurve
RL=1.0kΩ
I
: VDS=5.0V
DSS
-- μA
DSS
IT05920
1000
3
2
-- %
10
7
5
3
2
1.0
Total Harmonic Distortion, THD
7
5
0 40 80 120 160 200 240
THD -- V
IN
THD : VCC=4.5V
f=1kHz
I
DSS
250μA
400μA
I
DSS
=140μA
Input Voltage, VIN -- mV
: VDS=5.0V
ITR02649
No.A1343-2/3