STK6712BMK3
No. 4292-2/11
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage 1 V
CC
1max No input signal 52 V
Maximum supply voltage 2 V
CC
2max No input signal 7 V
Maximum phase current I
OH
max
per phase, R/L = 5Ω, 10mH,
2.5 A
0.5 s 1 pulse, Vcc input
Operating substrate temperature Tc max 105 °C
Junction temperature Tj max 150 °C
Storage temperature Tstg –40 to +125 °C
Repeated avalanche handling capability Ear max 38 mJ
Specifications
Maximum Ratings at Ta = 25°C
Allowable Operating Conditions at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Supply voltage 1 V
CC
1 With input signal 18 to 42 V
Supply voltage 2 V
CC
2 With input signal 4.75 to 5.25 V
Phase driver withstand voltage V
DSS
(min)120 V
Phase current I
OH
max Duty 50% (max)1.7 A
Electrical Characteristics at Ta = 25°C, VCC1 = 36V, VCC2 = 5V
Parameter Symbol Conditions
Ratings
Unit
min typ max
Output saturation voltage V
ST
RL = 23 Ω, V
IN
= 0.8 V 1.1 1.5 V
Output current (average) Io ave
R/L = 3.5 Ω/3.8 mH, V
IN
= 0.8 V per phase
0.52 0.58 0.64 A
Pin 1 current consumption (average) I
CC
2
Load; R = 3.5 Ω, L = 3.8 mH, VIN= 0.8 V per phase
10 20 mA
FET diode voltage Vdf Idf= 1.0A 1.2 1.8 V
TTL input ON voltage V
IH
Input voltage when F1, 2, 3, 4 OFF 2.0 V
TTL input OFF voltage V
IL
Input voltage when F1, 2, 3, 4 ON 0.8 V
Switching time
t
ON
RL = 24 Ω, V
IN
= 0.8 V 95 ns
t
OFF
RL = 24 Ω, V
IN
= 0.8 V 0.2 µs
Note: With regulated voltage power supply.
Equivalent Circuit
Junction Thermal Resistance
Parameter Symbol Conditions Ratings Unit
Power FET θj – c 13.5 °C / W