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Ordering number : ENN8102
SCH1311
P-Channel Silicon MOSFET
SCH1311
General-Purpose Switching Device
Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --6.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 22 ns
Fall Time t
Marking : JL Continued on next page.
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--0.8A, VGS=--10V 225 290 mΩ
RDS(on)2 ID=--0.4A, VGS=--4V 375 525 mΩ
r
f
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V , VDS=0 ±10 µA
VDS=--10V, ID=--0.8A 0.9 1.5 S
See specified Test Circuit. 4 ns
See specified Test Circuit. 8 ns
min typ max
Ratings
--30 V
±20 V
--1.5 A
Unit
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504PE TS IM TB-00000517
No.8102-1/4
SCH1311
Continued from preceding page.
Parameter Symbol Conditions
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.7 nC
Diode Forward Voltage V
SD
IS=--1.5A, VGS=0 --0.89 --1.5 V
min typ max
Ratings
Package Dimensions Switching Time Test Circuit
unit : mm
2221A
G
50Ω
VDD= --15V
ID= --0.8A
RL=18.7Ω
D
S
V
OUT
SCH1311
V
IN
1.6
645
0.2
3
2
0.5
0.56
0.05
1.6
1.5
1
0.05
0.2
1 : Drain
0V
--10V
PW=10µs
D.C.≤1%
V
IN
2 : Drain
0.25
3 : Gate
4 : Source
5 : Drain
P.G
6 : Drain
Unit
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--0.2
Drain-to-Source V oltage, V
800
700
600
(on) -- mΩ
DS
Static Drain-to-Source
On-State Resistance, R
ID= --0.4A
500
400
300
200
100
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source V oltage, V
SANYO : SCH6
I
-- V
D
--8V
--10V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
RDS(on) -- V
--0.8A
--6V
DS
--5V
--4V
DS
GS
--7 --8 --9 --10
GS
V
-- V
-- V
GS
= --3V
IT02742
Ta=25°C
IT02744
I
-- V
D
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
--1.2
D
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --4.0--3.5--3.0--2.5
Gate-to-Source V oltage, V
600
500
400
(on) -- mΩ
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.4A, V
I
D
I
D
GS
= --0.8A, V
°
Ta=75
= --4V
GS
GS
C
°
--25
GS
= --10V
C
Ambient Temperature, Ta -- °C
C
°
25
-- V
IT02743
IT08152
No.8102-2/4
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