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Ordering number : ENN8102
SCH1311
P-Channel Silicon MOSFET
SCH1311
General-Purpose Switching Device
Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --6.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 22 ns
Fall Time t
Marking : JL Continued on next page.
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--0.8A, VGS=--10V 225 290 mΩ
RDS(on)2 ID=--0.4A, VGS=--4V 375 525 mΩ
r
f
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V , VDS=0 ±10 µA
VDS=--10V, ID=--0.8A 0.9 1.5 S
See specified Test Circuit. 4 ns
See specified Test Circuit. 8 ns
min typ max
Ratings
--30 V
±20 V
--1.5 A
Unit
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504PE TS IM TB-00000517
No.8102-1/4
SCH1311
Continued from preceding page.
Parameter Symbol Conditions
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.7 nC
Diode Forward Voltage V
SD
IS=--1.5A, VGS=0 --0.89 --1.5 V
min typ max
Ratings
Package Dimensions Switching Time Test Circuit
unit : mm
2221A
G
50Ω
VDD= --15V
ID= --0.8A
RL=18.7Ω
D
S
V
OUT
SCH1311
V
IN
1.6
645
0.2
3
2
0.5
0.56
0.05
1.6
1.5
1
0.05
0.2
1 : Drain
0V
--10V
PW=10µs
D.C.≤1%
V
IN
2 : Drain
0.25
3 : Gate
4 : Source
5 : Drain
P.G
6 : Drain
Unit
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--0.2
Drain-to-Source V oltage, V
800
700
600
(on) -- mΩ
DS
Static Drain-to-Source
On-State Resistance, R
ID= --0.4A
500
400
300
200
100
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source V oltage, V
SANYO : SCH6
I
-- V
D
--8V
--10V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
RDS(on) -- V
--0.8A
--6V
DS
--5V
--4V
DS
GS
--7 --8 --9 --10
GS
V
-- V
-- V
GS
= --3V
IT02742
Ta=25°C
IT02744
I
-- V
D
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
--1.2
D
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --4.0--3.5--3.0--2.5
Gate-to-Source V oltage, V
600
500
400
(on) -- mΩ
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.4A, V
I
D
I
D
GS
= --0.8A, V
°
Ta=75
= --4V
GS
GS
C
°
--25
GS
= --10V
C
Ambient Temperature, Ta -- °C
C
°
25
-- V
IT02743
IT08152
No.8102-2/4
Forward Transfer Admittance, yfs -- S
Switching Time, SW Time -- ns
100
1.0
0.1
--0.01
10
SCH1311
I
5
3
2
7
5
3
2
yfs -- I
Ta= --25
--0.1 --1.0
Drain Current, I
SW Time -- I
7
5
3
2
7
5
3
2
t
td(on)
D
VDS= --10V
C
°
25
C
°
C
°
75
23 5723 57 23 5
D
-- A
IT02746
D
VDD= --15V
VGS= --10V
(off)
d
t
f
t
r
--10
7
5
3
2
-- A
F
--1.0
7
5
3
2
--0.1
7
5
Forward Drain Current, I
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.4--1.2
Diode Forward V oltage, V
1000
Ciss, Coss, Crss -- pF
7
5
3
2
100
7
5
3
2
Ciss, Coss, Crss -- V
F
Ta=75°C
-- V
C
°
25
Ciss
Coss
Crss
SD
C
°
--25
SD
-- V
DS
VGS=0
IT02747
f=1MHz
1.0
3
--10
--8
-- V
GS
--6
--4
--2
Gate-to-Source V oltage, V
0
0
1.0
-- W
0.8
D
0.6
57
VDS= --10V
ID= --1.5A
--0.1
23 57 23
Drain Current, I
D
--1.0
-- A
VGS -- Qg
Total Gate Charge, Qg -- nC
P
-- Ta
D
Mounted on a ceramic board (900mm
IT02748
IT02750
10
0
--5
--10
Drain-to-Source V oltage, V
--10
= --6A
I
DP
7
5
3
= --1.5A
I
2
D
--1.0
-- A
7
D
5
3
2
--0.1
7
Drain Current, I
5
3
2
5.04.54.02.0 2.5 3.0 3.50.5 1.0 1.5
--0.01
--0.01 --0.1
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
23 57 23 57 23 57
A S O
DC operation (Ta=25
--1.0 --10
Drain-to-Source V oltage, V
-- V
DS
10ms
100ms
2
✕0.8mm)
-- V
DS
<10µs
°
C)
--30--25--20--15
IT02749
100µs
1ms
253
IT08153
0.4
2
0.2
✕0.8mm)
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08147
No.8102-3/4
SCH1311
Note on usage : Since the SCH1311 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
PS
No.8102-4/4
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