SANYO MCH6702 Datasheet

Ordering number : ENN6684A

MCH6702

DC/DC Converter Applications

PNP Epitaxial Planar Silicon Transistor

Schottky Barrier Diode

MCH6702

Features

•

Composite type with a PNP transistor and
a Schottky barrier diode contained in one
package facilitatiing high-density mounting.

•

The MCH6702 consists of two chips which
are equivaient to the MCH6101 and SBS006,
respectively.

•

The ultrasmall package facilitates

Package Dimensions

unit : mm

2191A

0.250.25

2.1

1.6

0.3

546

[MCH6702]

0.15

miniaturization in end products. (mounting

1

height 0.85mm).

32

0.65

2.0

(Bottom view)

0.07

0.85

654

123

(Top view)

1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)

SANYO : MCPH6

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : PB

CBO
CEO
EBO

C

CP

B

C

RRM
RSM

O

FSM

Mounted on a ceramic board(600mm2✕0.8mm) 1.0 W

50Hz sine wave, 1 cycle 10 A

--15 V

--15 V

--5 V

--1.5 A

--3 A

--300 mA

30 V
30 V

0.7 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20502 TS IM / O1000 TS IM TA-3025

No.6684-1/4

Electrical Characteristics at T a=25 °C

MCH6702

Parameter Symbol Conditions

[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 17 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--750mA, IB=--15mA ---120 ---180 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--750mA, IB=--15mA ---0.85 ---1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[Di]
Reverse Voltage V

Forward Voltage VF2I

Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VF1I

VF3I

VCB=--12V, IE=0 --0.1 µA
VEB=--4V, IC=0 ---0.1 µA
VCE=--2V, IC=--100mA 200 560
VCE=--2V, IC=--300mA 350 MHz

T

=--10µA, IE=0 ---15 V
=--1mA, RBE=∞ ---15 V

=--10µA, IC=0 ---5 V
See specified Test Circuit 50 ns
See specified Test Circuit 90 ns
See specified Test Circuit 15 ns

f

IR=0.5mA 30 V

R

R

rr

=0.3A 0.35 0.40 V

F

=0.5A 0.42 0.47 V

F

=0.7A 0.5 0.55 V

F

VR=10V 200 µA

IF=IR=100mA, See specified Test Circuit 10 ns

Rathings

min typ max

Electrical Connection

Unit

45

123

6

Switching Time Test Circuit trr Specified Circuit

[TR] [Di]

I

PW=20µs
D.C.≤1%

INPUT

V

R

50Ω

IC= --20IB1=20IB2= --750mA

B2

I

B1

R

B

+

220µF 470µF

+

VCC= --5VVBE=5V

OUTPUT

R

L

Duty≤10%

50Ω 100Ω 10Ω

10µs

--5V

100mA100mA

10mA

t

rr

No.6684-2/4