Sanyo MCH6619 Specifications

Ordering number : ENN7156
MCH6619
P-Channel Silicon MOSFET
MCH6619
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
Package Dimensions
unit : mm
[MCH6619]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
(Bottom view)
0.15
654
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
SANYO : MCPH6
Specifications
0.85
123
(Top view)
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --4.0 A Mounted on a ceramic board (900mm2✕0.8mm)1unit
--30 V
±20 V
--1.0 A
0.8 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--500mA, VGS=--10V 420 550 m RDS(on)2 ID=--300mA, VGS=--4V 720 1000 m
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.57 0.82 S
min typ max
Marking : FT Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3488
No.7156-1/4
MCH6619
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF Output Capacitance Coss VDS=--10V, f=1MHz 16 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 12 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Diode Forward Voltage V
SD
See specified Test Circuit. 4 ns
r
See specified Test Circuit. 4 ns
f
IS=--1A, VGS=0 --0.89 --1.5 V
min typ max
Electrical Connection Switching Time Test Circuit
V
IN
0V
654
123
Top view
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
--10V
P.G
PW=10µs D.C.1%
V
Ratings
VDD= --15V
D
S
ID= --500mA RL=30
V
OUT
MCH6619
IN
G
50
Unit
--2.0
--1.5
-- A D
--1.0
Drain Current, I
--0.5
0
0
--0.2
1400
1200
ID= --0.3A
1000
(on) -- m
DS
800
600
400
I
-- V
D
--10V
DS
--6V
--5V
--8V
--4V
= --3V
V
GS
--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8
Drain-to-Source V oltage, V
RDS(on) -- V
DS
GS
-- V
IT03310
Ta=25°C
--0.5A
I
-- V
D
= --0.5A, V
GS
Ta=75
GS
GS
°C
--25°C
25°C
GS
= --4V
= --10V
-- V
--1.4
VDS= --10V
--1.2
--1.0
-- A D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
RDS(on) -- Ta
= --0.3A, V
I
D
I
D
(on) -- m
DS
1200
1000
800
600
400
IT03311
200
Static Drain-to-Source
On-State Resistance, R
0
--1 --2 --3 --4 --6 --7 --8--5 --9 --10
Gate-to-Source V oltage, V
GS
-- V
IT03312
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03313
No.7156-2/4
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