Sanyo MCH6619 Specifications

Page 1
Ordering number : ENN7156
MCH6619
P-Channel Silicon MOSFET
MCH6619
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
Package Dimensions
unit : mm
[MCH6619]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
(Bottom view)
0.15
654
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
SANYO : MCPH6
Specifications
0.85
123
(Top view)
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --4.0 A Mounted on a ceramic board (900mm2✕0.8mm)1unit
--30 V
±20 V
--1.0 A
0.8 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--500mA, VGS=--10V 420 550 m RDS(on)2 ID=--300mA, VGS=--4V 720 1000 m
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.57 0.82 S
min typ max
Marking : FT Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3488
No.7156-1/4
Page 2
MCH6619
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF Output Capacitance Coss VDS=--10V, f=1MHz 16 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 12 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Diode Forward Voltage V
SD
See specified Test Circuit. 4 ns
r
See specified Test Circuit. 4 ns
f
IS=--1A, VGS=0 --0.89 --1.5 V
min typ max
Electrical Connection Switching Time Test Circuit
V
IN
0V
654
123
Top view
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
--10V
P.G
PW=10µs D.C.1%
V
Ratings
VDD= --15V
D
S
ID= --500mA RL=30
V
OUT
MCH6619
IN
G
50
Unit
--2.0
--1.5
-- A D
--1.0
Drain Current, I
--0.5
0
0
--0.2
1400
1200
ID= --0.3A
1000
(on) -- m
DS
800
600
400
I
-- V
D
--10V
DS
--6V
--5V
--8V
--4V
= --3V
V
GS
--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8
Drain-to-Source V oltage, V
RDS(on) -- V
DS
GS
-- V
IT03310
Ta=25°C
--0.5A
I
-- V
D
= --0.5A, V
GS
Ta=75
GS
GS
°C
--25°C
25°C
GS
= --4V
= --10V
-- V
--1.4
VDS= --10V
--1.2
--1.0
-- A D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
RDS(on) -- Ta
= --0.3A, V
I
D
I
D
(on) -- m
DS
1200
1000
800
600
400
IT03311
200
Static Drain-to-Source
On-State Resistance, R
0
--1 --2 --3 --4 --6 --7 --8--5 --9 --10
Gate-to-Source V oltage, V
GS
-- V
IT03312
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03313
No.7156-2/4
Page 3
yfs -- I
fs -- S
y
1.0
3
2
7
5
3
2
Ta= --25
75
D
25°C
°C
°C
Forward Transfer Admittance,
0.1
100
10
Switching Time, SW Time -- ns
1.0
--10
23 57 2 2357
--0.01 --0.1
Drain Current, I
SW Time -- I
VDD= --15V
7
VGS= --
5
3 2
7 5
3 2
35
10V
t
d
td(on)
--0.1 --1.0
2735723
Drain Current, I
VGS -- Qg
VDS= --10V
(off)
t
f
t
r
D
D
ID= --1.0A
--8
-- V GS
--6
--4
--2
Gate-to-Source V oltage, V
0
0 0.5 1.0 1.5 2.0 3.02.5
Total Gate Charge, Qg -- nC
P
-- Ta
1.0
D
-- A
D
-- A
VDS= --10V
--1.0
IT03314
IT03316
IT03318
MCH6619
3
I
-- V
F
°C
Ta=75
Ciss
SD
°C
25°C
--25
-- V
SD
DS
5 3
2
--1.0
-- A
7
F
5 3
2
--0.1 7 5
Forward Current, I
3 2
--0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward V oltage, V
100
7
5
3
2
Ciss, Coss, Crss -- V
Coss
Ciss, Coss, Crss -- pF
10
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source V oltage, V
7
I
= --4A
5
DP
3 2
I
= --1A
D
--1.0
-- A
7
D
5 3
2
--0.1
Drain Current, I
--0.01
Operation in this area is limited by RDS(on).
7 5
3
Ta=25°C
2
Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit
Drain-to-Source V oltage, V
Crss
DS
A S O
10ms
100ms
DC operation
--1.0--0.1 --10
DS
-- V
1ms
-- V
VGS=0
IT03315
f=1MHz
IT03317
<10µs
100µs
23 523 5723 57
IT04070
-- W
0.8
D
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
M
ounted on a ceramic board(900mm
2
0.8mm) 1unit
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04071
No.7156-3/4
Page 4
MCH6619
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice.
No.7156-4/4
PS
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