Sanyo MCH6618 Specifications

Ordering number : ENN6973

MCH6618

N-Channel and P-Channel Silicon MOSFETs

MCH6618

Ultrahigh-Speed Switching Applications

Features

•

The MCH6618 encapsulates an N-channel MOSFET
and a P-channel MOSFET that feature low
ON-resistance and ultrahigh switching-speed, thus
allows high-density mounting.

• Low ON-resistance.

Package Dimensions

unit : mm

2173A

[MCH6618]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2

0.85

123

6 : Drain1
SANYO : MCPH6

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

PW≤10µs, duty cycle≤1% 1.4 --0.56 A

DP

Mounted on a ceramic board(900mm2✕0.8mm)1unit

D

30 --50 V

±10 ±20 V

0.35 --0.14 A

0.8 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
[N-channel]

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω

RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω

=1mA, VGS=0 30 V
VDS=30V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=80mA 150 220 mS

min typ max

Marking : FS Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73001 TS IM TA-3264

No.6973-1/6

MCH6618

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 19 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 155 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC
Diode Forward Voltage V

[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA--1--2.5V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF

Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--70mA 1.32 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--70mA 0.17 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.34 nC
Diode Forward Voltage V

SD

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--40mA, VGS=--10V 17 22 Ω
RDS(on)2 ID=--20mA, VGS=--4V 23 32 Ω

SD

See specified Test Circuit 65 ns

r

See specified Test Circuit 120 ns

f

IS=150mA, VGS=0 0.87 1.2 V

=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--40mA 50 70 mS



See specified Test Circuit 10 ns

r

See specified Test Circuit 150 ns

f

IS=--70mA, VGS=0 --0.85 --1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

[N-channel] [P-channel]

VDD=15V

V

IN

4V
0V

PW=10µs
D.C.≤1%

P.G

ID=80mA

RL=187.5Ω

S

V

OUT

MCH6618

V

IN

G

50Ω

D

V

0V

--10V
PW=10µs

D.C.≤1%

P.G

IN

Electrical Connection (Top view)

D1 G2 S2

VDD= --25V

ID= --40mA
RL=625Ω

S

V

OUT

MCH6618

V

IN

G

50Ω

D

S1 G1 D2

No.6973-2/6