SANYO MCH6616 Datasheet

Ordering number : ENN7013

MCH6616

N-Channel Silicon MOSFET

MCH6616

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

• Composite type with 2 MOSFETs contained in a single

package, facilitating high-density mounting.

Package Dimensions

unit : mm

2173A

[MCH6616]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1

Specifications

0.85

123

SANYO : MCPH6

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 6.4 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit

20 V

±10 V

1.6 A

0.8 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=0.8A, VGS=4V 180 230 mΩ
RDS(on)2 ID=0.4A, VGS=2.5V 220 310 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 300 450 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=0.8A 1.6 2.4 S

Marking : FQ Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71801 TS IM TA-3262

No.7013-1/4

MCH6616

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 105 pF
Output Capacitance Coss VDS=10V , f=1MHz 23 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 19 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=1.6A 1.4 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=1.6A 0.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.6A 0.3 nC
Diode Forward Voltage V

SD

See specified Test Circuit 16 ns

r

See specified Test Circuit 8 ns

f

IS=1.6A, VGS=0 0.92 1.2 V

Switching Time Test Circuit Electrical Connection

V
4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

VDD=10V

D1 G2 S2

ID=800mA
RL=12.5Ω

D

G

V

OUT

S1 D2G1

Ratings

min typ max

Unit

P.G

2.0

1.6

-- A
D

1.2

6.0V

0.8

10.0V

Drain Current, I

0.4

0

0

400

350

ID=0.4A

300

(on) -- mΩ

250

DS

200

150

50Ω

I

-- V

D

3.0V

4.0V

0.2

2.5V

1.8V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

RDS(on) -- V

0.8A

1.5V

DS

S

DS

GS

MCH6616

V

=1.0V

GS

-- V

Ta=25°C

IT02916

I

-- V

2.0

VDS=10V

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

D

Gate-to-Source V oltage, V

RDS(on) -- Ta

=0.4A, V

I

D

=0.8A, V

I

D

(on) -- mΩ

DS

400

350

300

250

200

150

Ta=75°C

GS

GS

25°C

=2.5V

GS

--25°C

GS

=4.0V

Ta= --25°C

-- V

75°C

25°C

IT02917

100

50

Static Drain-to-Source

On-State Resistance, R

0

0246810

Gate-to-Source V oltage, V

GS

-- V

IT03305

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03306

No.7013-2/4