SANYO MCH6615 Datasheet

Ordering number : ENN6796

MCH6615

N-Channel and P-Channel Silicon MOSFETs

MCH6615

Ultrahigh-Speed Switching Applications

Features

•

The MCH6615 incorporates two elements in the same
package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs,
thereby enabling high-density mounting.

• Low ON-resistance.

• 2.5V drive.

Package Dimensions

unit : mm

2173

[MCH6615]

0.3

5

64

2

13

0.65

2.0

0.250.25

1.6

0.15

2.1

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2

0.85

0.15

5 : Gate2
6 : Drain1

SANYO : MCPH6

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

PW≤10µs, duty cycle≤1% 2.6 --1.6 A

DP

Mounted on a ceramic board (900mm

D

2

✕0.8mm)1unit

30 --30 V

±10 ±10 V

0.65 --0.4 A

0.8 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
[N-channel]

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω

RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω

=1mA, VGS=0 30 V
VDS=30V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=150mA 400 560 mS

min typ max

Marking : FP Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

GI IM

20101 TS IM TA-2910

No.6796-1/6

MCH6615

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 30 pF
Output Capacitance Coss VDS=10V, f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 32 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--50mA, VGS=--2.5V 3.5 4.9 Ω

Input Capacitance Ciss VDS=--10V, f=1MHz 28 pF
Output Capacitance Coss VDS=--10V, f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 5.2 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 200 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--200mA 2 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--200mA 0.25 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--200mA 0.35 nC
Diode Forward Voltage V

SD

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--100mA, VGS=--4V 2.4 3.1 Ω

RDS(on)3 ID=--10mA, VGS=--1.5V 10 20 Ω

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 160 ns

f

IS=300mA, VGS=0 0.8 1.2 V

=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--100mA 210 300 mS



See specified Test Circuit 75 ns

r

See specified Test Circuit 150 ns

f

IS=--200mA, VGS=0 --0.82 --1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

[N-channel] [P-channel]

4V
0V

PW=10µs
D.C.≤1%

P.G

V

IN

VDD=15V

D

S

ID=150mA
RL=100Ω

V

OUT

MCH6615

V

IN

G

50Ω

0V

--4V
PW=10µs

D.C.≤1%

P.G

V

IN

Electrical Connection

D1 G2 S2

(Top view)

S1 G1 D2

V

IN

G

50Ω

VDD= --15V

ID= --100mA
RL=150Ω

D

S

V

OUT

MCH6615

No.6796-2/6