SANYO MCH6614 Datasheet
Ordering number : ENN6795
MCH6614
N-Channel and P-Channel Silicon MOSFET
MCH6614
Ultrahigh-Speed Switching Applications
Features
•
The MCH6614 incorporates two elements that are an
N-channel and a P-channel MOSFETs that feature low
ON resistance and high-speed switching, thereby
enabling high-density mounting.
• Low ON-resistance.
• 2.5V drive.
Package Dimensions
unit : mm
2173
[MCH6614]
0.3
5
64
2
13
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
0.85
0.15
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
PW≤10µs, duty cycle≤1% 1.4 --1.6 A
DP
Mounted on a ceramic board (900mm
D
2
✕0.8mm)1unit
30 --30 V
±10 ±10 V
0.35 --0.4 A
0.8 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
=1mA, VGS=0 30 V
VDS=30V, VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V, ID=80mA 150 220 mS
min typ max
Marking : FN Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20101 TS IM TA-2909
GI IM
No.6795-1/6
MCH6614
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 19 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 155 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--50mA, VGS=--2.5V 3.5 4.9 Ω
Input Capacitance Ciss VDS=--10V, f=1MHz 28 pF
Output Capacitance Coss VDS=--10V, f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 5.2 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 200 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--200mA 2 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--200mA 0.25 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--200mA 0.35 nC
Diode Forward Voltage V
SD
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--100mA, VGS=--4V 2.4 3.1 Ω
RDS(on)3 ID=--10mA, VGS=--1.5V 10 20 Ω
SD
See specified Test Circuit 65 ns
r
See specified Test Circuit 120 ns
f
IS=150mA, VGS=0 0.87 1.2 V
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--100mA 210 300 mS
See specified Test Circuit 75 ns
r
See specified Test Circuit 150 ns
f
IS=--200mA, VGS=0 --0.82 --1.2 V
min typ max
Ratings
Unit
Switching Time Test Circuit
[N-channel] [P-channel]
4V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
VDD=15V
D
S
ID=80mA
RL=187.5Ω
V
OUT
MCH6614
V
IN
G
50Ω
0V
--4V
PW=10µs
D.C.≤1%
P.G
V
IN
Electrical Connection
D1 G2 S2
(Top view)
S1 G1 D2
V
IN
G
50Ω
VDD= --15V
ID= --100mA
RL=150Ω
D
S
V
OUT
MCH6614
No.6795-2/6
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