SANYO MCH6612 Datasheet

Ordering number : ENN7078

Preliminary

MCH6612

N-Channel Silicon MOSFET

MCH6612

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

• Composite type with 2 MOSFETs contained in a single

package, facilitating high-density mounting.

Package Dimensions

unit : mm

2173A

[MCH6612]

0.3

546

0.07

2.0

2.1

0.250.25

1.6

0.65

0.15

654

1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1

SANYO : MCPH6

Specifications

0.85

123

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 ° C Storage T emperature Tstg --55 to +150 °C

DSS GSS

PW≤10µs, duty cycle≤1% 1.8 A Mounted on a ceramic board (900mm2✕0.8mm)1unit

50 V

±20 V

0.45 A

0.8 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V , ID=100µA 1 2.4 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=100mA, VGS=10V 1.8 2.3 Ω RDS(on)2 ID=50mA, VGS=4V 2.3 3.2 Ω

=1mA, VGS=0 50 V VDS=50V , VGS=0 10 µA VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=100mA 220 310 mS

Marking : FL Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1501 TS IM TA-2467

No.7078-1/4

MCH6612

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 22 pF Output Capacitance Coss VDS=10V , f=1MHz 12 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.6 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 260 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 1.86 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC Diode Forward Voltage V

See specified Test Circuit. 12 ns

See specified Test Circuit. 110 ns

IS=200mA, VGS=0 0.83 1.2 V

Switching Time Test Circuit Electrical Connection

10V

PW=10µs D.C.≤1%

VDD=25V

ID=100mA RL=250Ω

D1 G2 S2

OUT

S1 D2G1

Ratings

min typ max

Unit

P.G

0.20

0.18

0.16

0.14

-- A D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02 0

50Ω

6.0V

ID -- V

4.0V

3.0V

8.0V

10.0V

0.2

0.4 0.6

Drain-to-Source V oltage, V

RDS(on) -- V

MCH6612

-- V

0.40

VDS=10V

0.35

2.5V

VGS=2.0V

0.8 1.00.1 0.3 0.5 0.7 0.9

IT00250 IT00251

Ta=25°C

0.30

-- A

0.25

0.20

0.15

Drain Current, I

0.10

0.05

000.5

Gate-to-Source V oltage, V

1.0

RDS(on) -- I

1.5

Ta=75°C

2.0

2.5 3.0 3.5

--25°C

-- V

25°C

VGS=10V

(on) -- Ω

ID=50mA

Static Drain-to-Source

On-State Resistance, R

0011223344556678910

100mA

Gate-to-Source V oltage, V

(on) -- Ω

Ta=75°C

25°C

--25°C

Static Drain-to-Source

On-State Resistance, R

1.0

-- V

IT00252 IT00253

0.01

23 57 23 57

Drain Current, I

0.1

-- A

1.0

No.7078-2/4

+ 2 hidden pages