SANYO MCH6610 Datasheet
Ordering number : ENN7042
Preliminary
MCH6610
N-Channel Silicon MOSFET
MCH6610
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
• Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
Package Dimensions
unit : mm
2173A
[MCH6610]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
0.15
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
0.85
123
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 1.8 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
50 V
±10 V
0.45 A
0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=100mA, VGS=4V 1.9 2.4 Ω
RDS(on)2 ID=50mA, VGS=2.5V 2.2 3 Ω
RDS(on)3 ID=10mA, VGS=1.5V 3.2 6.4 Ω
=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=100mA 340 490 mS
Marking : FJ Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1501 TS IM TA-2465
No.7042-1/4
MCH6610
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 25 pF
Output Capacitance Coss VDS=10V , f=1MHz 12 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 350 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 2.18 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 75 ns
r
See specified Test Circuit. 170 ns
f
IS=200mA, VGS=0 0.83 1.2 V
Switching Time Test Circuit Electrical Connection
V
IN
4V
0V
PW=10µs
D.C .≤1%
V
IN
G
VDD=25V
ID=100mA
RL=250Ω
D
V
D1 G2 S2
OUT
S1 D2G1
Ratings
min typ max
Unit
P.G
0.20
0.18
0.16
0.14
-- A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0
5
50Ω
I
-- V
D
3.5V
4.0V
DS
3.0V
2.5V
2.0V
6.0V
0.2
0.4
Drain-to-Source V oltage, V
RDS(on) -- V
0.6
S
DS
GS
MCH6610
V
GS
0.8 1.00.1 0.3 0.5 0.7 0.9
-- V
Ta=25°C
0.40
0.35
D
GS
VDS=10V
75°C
I
-- V
=1.5V
0.30
-- A
0.25
D
0.20
0.15
Drain Current, I
0.10
0.05
0
0 0.5 1.0 1.5 2.0 2.5
IT00274 IT00275
10
7
Gate-to-Source V oltage, V
Ta=75°C
RDS(on) -- I
--25°C
25°C
Ta= --25°C
GS
D
25°C
-- V
VGS=4V
4
(on) -- Ω
DS
3
100mA
ID=50mA
2
1
Static Drain-to-Source
On-State Resistance, R
0
1263456
0
Gate-to-Source V oltage, V
GS
7
-- V
5
(on) -- Ω
DS
3
Ta=75°C
2
25°C
--25°C
Static Drain-to-Source
On-State Resistance, R
8910
IT00276 IT00277
1.0
0.01
357 2357
2
Drain Current, I
0.1
D
-- A
1.0
No.7042-2/4
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