SANYO MCH6609 Datasheet

Ordering number : ENN7041

Preliminary

MCH6609

P-Channel Silicon MOSFET

MCH6609

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

• Composite type with 2 MOSFETs contained in a single

package, facilitating high-density mounting.

Package Dimensions

unit : mm

2173A

[MCH6609]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1

SANYO : MCPH6

Specifications

0.85

123

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --1.1 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit

--50 V

±10 V

--0.28 A

0.8 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=--70mA, VGS=--4V 5.1 6.6 Ω
RDS(on)2 ID=--40mA, VGS=--2.5V 6 8.4 Ω
RDS(on)3 ID=--10mA, VGS=--1.5V 10 20 Ω

=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--70mA 170 240 mS

Marking : FI Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1501 TS IM TA-2464

No.7041-1/4

MCH6609

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 28 pF
Output Capacitance Coss VDS=--10V, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 3.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 250 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--140mA 1.98 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--140mA 0.22 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--140mA 0.33 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 45 ns

r

See specified Test Circuit. 120 ns

f

IS=--140mA, VGS=0 0.83 1.2 V

Switching Time Test Circuit Electrical Connection

0V

--4V

PW=10µs
D.C .≤ 1%

V

IN

V

IN

G

VDD= --25V

ID= --70mA
RL=357Ω

D

V

D1 G2 S2

OUT

S1 D2G1

Ratings

min typ max

Unit

DS

MCH6609

S

-- A
D

--0.14

--0.12

--0.10

--0.08

P.G

--4.0V

--3.5V

50Ω

I

D

--2.5V

-- V

--3.0V

--2.0V

--0.06

--6.0V

VGS= --1.5V

--0.04

Drain Current, I

--0.02

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

Drain-to-Source V oltage, V

RDS(on) -- V

(on) -- Ω

7

DS

I

6

D

--70mA

= --40mA

DS

GS

-- V

IT00287

Ta=25°C

--0.30

VDS= --10V

--0.25

-- A

--0.20

D

--0.15

--0.10

Drain Current, I

--0.05

0

0

10

7

5

(on) -- Ω

DS

3

I

-- V

D

GS

Ta= --25°C

--0.5 --1.0 --1.5 --2.0

Gate-to-Source V oltage, V

RDS(on) -- I

D

Ta=75°C

25°C

--25°C

GS

75°C

--2.5 --3.0

-- V

VGS= --4V

25°C

IT00288

4

3

Static Drain-to-Source

On-State Resistance, R

02--1

--25--3

--48--59--610--7 --8 --9 --10

Gate-to-Source V oltage, V

GS

-- V

IT00289

2

Static Drain-to-Source

On-State Resistance, R

1

--0.01

23 57 23 5

Drain Current, I

--0.1

D

-- A

IT00290

No.7041-2/4