SANYO MCH6608 Datasheet
Ordering number : ENN7040
Preliminary
MCH6608
N-Channel Silicon MOSFET
MCH6608
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
• Composite type with 2 MOSFETs contained in a single
package, facilitaing high-density mounting.
Package Dimensions
unit : mm
2173A
[MCH6608]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
0.15
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
0.85
123
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 2.6 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
30 V
±10 V
0.65 A
0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω
RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω
=1mA, VGS=0 30 V
VDS=30V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=150mA 400 560 mS
Marking : FH Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82201 TS IM TA-2463
No.7040-1/4
MCH6608
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 30 pF
Output Capacitance Coss VDS=10V , f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 32 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 250 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 110 ns
r
See specified Test Circuit. 160 ns
f
IS=300mA, VGS=0 0.8 1.2 V
Switching Time Test Circuit Electrical Connection
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
VDD=15V
ID=150mA
RL=100Ω
D
V
D1 G2 S2
OUT
S1 D2G1
Ratings
min typ max
Unit
P.G
0.30
0.25
4.0V
6.0V
-- A
0.20
D
0.15
0.10
Drain Current, I
0.05
000.1
3.0
2.5
2.0
(on) -- Ω
0.2
DS
1.5
ID=80mA
1.0
0.5
Static Drain-to-Source
On-State Resistance, R
001
50Ω
I
-- V
D
DS
3.5V
2.5V
3.0V
2.0V
0.3
0.4
0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source V oltage, V
RDS(on) -- V
150mA
2
3
4
5
Gate-to-Source V oltage, V
6
MCH6608
S
=1.5V
V
GS
-- V
DS
IT00224 IT00225
GS
Ta=25°C
78910
GS
IT00226 IT00227
-- V
0.6
VDS=10V
0.5
-- A
0.4
D
0.3
0.2
Drain Current, I
0.1
0
0
10
7
5
3
(on) -- Ω
2
0.5 1.0 1.5 2.0
DS
1.0
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
0.1
0.01
25°C
23 57 23 57
I
-- V
D
GS
Gate-to-Source V oltage, V
RDS(on) -- I
Ta=75°C
--25°C
Drain Current, I
0.1
D
GS
D
-- A
Ta= --25°C
-- V
VGS=4V
No.7040-2/4
25°C
75°C
2.5
1.0
Loading...