SANYO MCH6606 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6461

MCH6606

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed swithcing.

· 4V drive.

· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : FF Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %11A

PD

Mounted on a ceramic board (900mm2×0.8mm) 1unit

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,Am05=

2)no(IDV,Am03=
SD

SD
SD

Package Dimensions

unit:mm

2173

[MCH6606]

0.3

5

64

2

13

0.65

2.0

V,Am1=

0=05V

SG

V,V05=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Aµ001=14.2V

D

Am05=58021Sm

D

V01=8.55.7

SG

V4=5.75.01

SG

zHM1=f,V01=2.6Fp
zHM1=f,V01=4.4Fp
zHM1=f,V01=5.1Fp

0.250.25

1.6

0.15

0.15

2.1

1 : Source1
2 : Gate1
3 : Drain2

0.85

4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6

sgnitaR

nimpytxam

05V
02±V

52.0A

8.0W

˚C
˚C

Ω
Ω

tinU

30300TS (KOTO) TA-2461 No.6461-1/4

MCH6606

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

Electrical Connection Switching Time Test Circuit

)no(tiucriCtseTdeificepseeS01sn

d

r

)ffo(tiucriCtseTdeificepseeS501sn

d

f

SG
SG

I

DS

S

SG

V,Am001=

SG

tiucriCtseTdeificepseeS11sn

tiucriCtseTdeificepseeS57sn

I,V01=

Am001=04.1Cn

D

I,V01=

Am001=12.0Cn

D

I,V01=

Am001=43.0Cn

D

0=58.02.1V

sgnitaR

nimpytxam

tinU

D1 G2 S2

S1 G1 D2

0.10

0.08

–A

D

0.06

0.04

Drain Current, I

0.02

0

0

12

11

10

– Ω

(on)

9

DS

8

7

6

Static Drain-to-Source

On-State Resistance, R

012344556

0.2 0.4 0.6 0.8 1.0

Drain-to-Source Voltage, VDS–V

ID=30mA

Gate-to-Source Voltage, V

I

-- V

D

DS

8.0V

10.0V

RDS(on) -- V

50mA

6.0V

4.0V

3.0V

2.5V

VGS=2.0V

IT00042

GS

Ta=25°C

78910

–V

GS

IT00044 IT00045

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

G

0.20

0.18

0.16

0.14

–A

D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02
0

012345

100

7
5

– Ω

3
2

(on)

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

1.0

0.01

VDD=25V

ID=50mA

RL=500Ω

S

V

OUT

MCH6606

I

-- V

D

D

50Ω

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

Ta=75°C

23 57 23

Drain Current, ID–A

GS

25°C

--25°C

Ta=--25

VDS=10V

°C

25°C

°C

75

IT00043

D

VGS=10V

0.1

No.6461-2/4