SANYO MCH6605 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6460
MCH6605
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed swithcing.
· 4V drive.
· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : FE Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %165.0–A
PD
Mounted on a ceramic board (900mm2×0.8mm) 1unit
D
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01–=
1)no(IDV,Am04–=
2)no(IDV,Am02–=
SD
SD
SD
Package Dimensions
unit:mm
2173
[MCH6605]
0.3
5
64
2
13
0.65
2.0
V,Am1–=
0=05–V
SG
V,V05–=
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
Aµ001–=1–5.2–V
D
Am04–=0507Sm
D
V01–=7122
SG
V4–=3223
SG
zHM1=f,V01–=2.6Fp
zHM1=f,V01–=0.4Fp
zHM1=f,V01–=3.1Fp
0.250.25
1.6
0.15
0.15
2.1
1 : Source1
2 : Gate1
3 : Drain2
0.85
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
sgnitaR
nimpytxam
05–V
02±V
41.0–A
8.0W
˚C
˚C
Ω
Ω
tinU
30300TS (KOTO) TA-2460 No.6460-1/4
MCH6605
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
Electrical Connection Switching Time Test Circuit
)no(tiucriCtseTdeificepseeS31sn
d
r
)ffo(tiucriCtseTdeificepseeS001sn
d
f
I
DS
S
V,Am07–=
SG
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS051sn
I,V01–=
SG
SG
SG
0=58.02.1V
Am07–=23.1Cn
D
I,V01–=
Am07–=71.0Cn
D
I,V01–=
Am07–=43.0Cn
D
sgnitaR
nimpytxam
tinU
D1 G2 S2
S1 G1 D2
--0.07
--0.06
--0.05
–A
D
--0.04
--0.03
--0.02
Drain Current, I
--0.01
I
D
--8.0V
--10.0V
-- V
DS
--6.0V
--4.0V
VGS=--2.5V
--3.0V
V
0V
--10V
PW=10µs
D.C.≤1%
P.G
IN
--0.14
--0.12
--0.10
–A
D
--0.08
--0.06
--0.04
Drain Current, I
--0.02
VDD=--25V
ID=--40mA
RL=625Ω
V
IN
G
50Ω
D
S
V
OUT
MCH6605
I
-- V
D
GS
VDS=--10V
°C
Ta=--25
25°C
°C
75
0
0
50
– Ω
(on)
DS
25
20
15
Static Drain-to-Source
On-State Resistance, R
10
--230--335--440--545--6
--0 .4
ID=--20mA
Drain-to-Source Voltage, VDS–V
Gate-to-Source Voltage, V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--40mA
--7 --8 --9 --10
GS
–V
IT00103
Ta=25°C
IT00105
0
100
7
– Ω
5
(on)
DS
3
2
Static Drain-to-Source
On-State Resistance, R
10
--0.01
--1
0
Gate-to-Source Voltage, VGS–V
23 57 23
--2
RDS(on) -- I
Ta=75°C
25°C
--25°C
Drain Current, ID–A
--4--3 --5 --6
IT00104
D
VGS=--10V
--0 .1
IT00106
No.6460-2/4
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