SANYO MCH6604 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6459
MCH6604
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed swithcing.
· 2.5V drive.
· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : FD Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %11A
PD
Mounted on a ceramic board (900mm2×0.8mm) 1unit
D
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,Am05=
2)no(IDV,Am03=
3)no(IDV,Am01=
Package Dimensions
unit:mm
2173
[MCH6604]
0.3
5
64
2
13
0.65
2.0
V,Am1=
0=05V
SG
V,V05=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
Aµ001=4.03.1V
D
Am05=031081Sm
D
V4=68.7
SG
V5.2=1.79.9
SG
V5.1=0102
SG
0.250.25
1.6
0.15
0.15
2.1
1 : Source1
2 : Gate1
3 : Drain2
0.85
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
sgnitaR
nimpytxam
05V
01±V
52.0A
8.0W
˚C
˚C
Ω
Ω
Ω
tinU
60100TS (KOTO) TA-2459 No.6459-1/4
MCH6604
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
d
r
d
f
DS
SD
SD
SD
)no(tiucriCtseTdeificepseeS81sn
)ffo(tiucriCtseTdeificepseeS091sn
I
S
Electrical Connection Switching Time Test Circuit
zHM1=f,V01=6.6Fp
zHM1=f,V01=7.4Fp
zHM1=f,V01=7.1Fp
tiucriCtseTdeificepseeS24sn
tiucriCtseTdeificepseeS501sn
I,V01=
SG
SG
SG
V,Am001=
0=58.02.1V
SG
Am001=75.1Cn
D
I,V01=
Am001=02.0Cn
D
I,V01=
Am001=23.0Cn
D
sgnitaR
nimpytxam
tinU
D1 G2 S2
S1 G1 D2
0.10
0.09
0.08
0.07
–A
D
0.06
0.05
0.04
0.03
Drain Current, I
0.02
0.01
0
0
12
11
10
– Ω
9
(on)
8
DS
ID=30mA
7
6
5
4
3
Static Drain-to-Source
On-State Resistance, R
2
012
0.2
Drain-to-Source Voltage, VDS–V
Gate-to-Source Voltage, V
I
-- V
D
3.5V
DS
3.0V
4.0V
6.0V
0.4 0.6 0.8 1.0
RDS(on) -- V
GS
50mA
3456
GS
2.5V
2.0V
=1.5V
V
GS
IT00054 IT00055
Ta=25
°C
78910
–V
IT00056
V
IN
4V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω
0.20
0.18
0.16
0.14
–A
D
0.12
0.10
0.08
0.06
Drain Current, I
0.04
0.02
0
0 0.5 1.0 1.5 2.0 3.02.5
100
7
5
– Ω
3
2
(on)
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
0.01 0.1
VDD=25V
ID=50mA
RL=500Ω
D
S
V
OUT
MCH6604
I
-- V
D
GS
VDS=10V
°C
Ta=--25°C
25
°C
75
Gate-to-Source Voltage, VGS–V
RDS(on) -- I
D
VGS=4V
Ta=75°C
25°C
--25°C
23 57 23
Drain Current, ID–A
IT00057
No.6446-2/4
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