SANYO MCH6601 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6458
MCH6601
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed swithcing.
· 2.5V drive.
· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : FA Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %18.0–A
PD
Mounted on a ceramic board (900mm2×0.8mm) 1unit
D
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01–=
1)no(IDV,Am05–=
2)no(IDV,Am03–=
3)no(IDV,Am1–=
Package Dimensions
unit:mm
2173
[MCH6601]
0.3
5
64
2
13
0.65
2.0
V,Am1–=
0=03–V
SG
V,V03–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Aµ001–=4.0–4.1–V
D
Am05–=08011Sm
D
V4–=84.01
SG
V5.2–=114.51
SG
V5.1–=7245
SG
0.250.25
1.6
0.15
0.15
2.1
1 : Source1
2 : Gate1
3 : Drain2
0.85
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
sgnitaR
nimpytxam
03–V
01±V
2.0–A
8.0W
˚C
˚C
Ω
Ω
Ω
tinU
30300TS (KOTO) TA-2457 No.6458-1/4
MCH6601
Continued from preceding page.
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ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
d
r
d
f
DS
SD
SD
SD
)no(tiucriCtseTdeificepseeS42sn
)ffo(tiucriCtseTdeificepseeS021sn
I
S
Electrical Connection Switching Time Test Circuit
zHM1=f,V01–=5.7Fp
zHM1=f,V01–=7.5Fp
zHM1=f,V01–=8.1Fp
tiucriCtseTdeificepseeS55sn
tiucriCtseTdeificepseeS031sn
I,V01–=
SG
SG
SG
V,Am001–=
D
I,V01–=
D
I,V01–=
D
0=38.02.1V
SG
Am001–=34.1Cn
Am001–=81.0Cn
Am001–=52.0Cn
sgnitaR
nimpytxam
tinU
D1 G2 S2
S1 G1 D2
--0.10
--0.09
--0.08
--0.07
–A
--0.06
D
--0.05
--0.04
--0.03
Drain Current, I
--0.02
--0.01
0
--3.5V
--6.0V
0
--0 .4
Drain-to-Source Voltage, VDS–V
25
– Ω
20
(on)
DS
15
ID=--30mA
Static Drain-to-Source
On-State Resistance, R
00--1 --2 --35--410--5
Gate-to-Source Voltage, V
(Top view)
I
-- V
D
--4.0V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
--50mA
DS
--3.0V
--2.5V
GS
--630--7 --8 --9 --10
GS
VGS=--1.5V
Ta=25
–V
VDD=--15V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
P.G
--2.0V
IT00077
°C
IT00079 IT00080
V
IN
G
50Ω
--0.20
--0.18
--0.16
--0.14
–A
D
--0.12
--0.10
--0.08
--0.06
Drain Current, I
--0.04
--0.02
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
100
7
5
3
– Ω
2
(on)
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
ID=--50mA
RL=300Ω
D
S
V
OUT
MCH6601
I
-- V
D
GS
VDS=--10V
25
°C
Ta=--25°C
°C
75
Gate-to-Source Voltage, VGS–V
RDS(on) -- I
D
IT00078
VGS=--4V
Ta=75°C
--25°C
23 57 23
Drain Current, ID–A
25°C
--0 .1
No.6458-2/4
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