SANYO MCH6405 Datasheet

Ordering number : ENN7012

MCH6405

N-Channel Silicon MOSFET

MCH6405

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2193A

[MCH6405]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

Specifications

0.85

123

SANYO : MCPH6

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W

20 V

±10 V

5A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=3A, VGS=4V 31 41 mΩ
RDS(on)2 ID=1.5A, VGS=2.5V 38 54 mΩ

=1mA, VGS=0 20 V
VDS=20V, VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=3A 6.3 9 S



Marking : KE Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71801 TS IM TA-3314

No.7012-1/4

MCH6405

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 570 pF
Output Capacitance Coss VDS=10V , f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 80 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=5A 7.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=5A 1.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=5A 2.1 nC
Diode Forward Voltage V

SD

See specified Test Circuit 16 ns

r

See specified Test Circuit 54 ns

f

IS=5A, VGS=0 0.86 1.2 V

Switching Time Test Circuit

Ratings

min typ max

Unit

G

50Ω

DS

VDD=10V

ID=3A
RL=3.33Ω

D

S

MCH6405

V

IN
4V
0V

V

IN

PW=10µs
D.C .≤1%

P.G

I

-- V

2.0V

2.5V

D

1.5V

5

4.0V

4

10.0V

-- A
D

3

2

Drain Current, I

1

0

0 0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

100

90

80

70

(on) -- mΩ

60

DS

ID=1.5A

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

0246810

RDS(on) -- V

3.0A

Gate-to-Source V oltage, V

DS

GS

GS

=1.0V

V

GS

-- V

Ta=25°C

-- V

V

OUT

IT03512

IT03514

I

-- V

8

VDS=10V

7

6

-- A

5

D

4

3

Drain Current, I

2

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

D

Gate-to-Source V oltage, V

100

90

80

70

(on) -- mΩ

60

DS

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=1.5A, V

I

D

=3.0A, V

I

D

GS

Ta=75°C

25°C

GS

GS

--25°C

GS

=2.5V

=4.0V

Ambient Temperature, Ta -- °C

-- V

No.7012-2/4

IT03513

IT03515