Sanyo MCH6403 Specifications

Ordering number : ENN6780

MCH6403

N-Channel Silicon MOSFET

MCH6403

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2193

[MCH6403]

0.3

5

64

2

13

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Drain
2 : Drain
3 : Gate
4 : Source

Specifications

0.85

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.4 W

0.15

5 : Drain
6 : Drain

SANYO : MCPH6

20 V

±10 V

3A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 200 pF

Output Capacitance Coss VDS=10V , f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 45 pF

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=4V 80 105 mΩ
RDS(on)2 ID=0.7A, VGS=2.5V 110 155 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 3.3 4.8 S

Marking : KC Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2908

No.6780-1/4

MCH6403

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 27 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 1 nC
Diode Forward Voltage V

SD

See specified Test Circuit 45 ns

r

See specified Test Circuit 45 ns

f

IS=3A, VGS=0 0.87 1.2 V

Switching Time Test Circuit

VDD=10V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=6.67Ω

V

OUT

Ratings

min typ max

Unit

P.G

2.4

6.0V

2.2

4.0V

2.0

3.0V

1.8

1.6

-- A
D

1.4

8.0V

1.2

1.0

0.8

Drain Current, I

0.6

0.4

0.2
0

0 0.2 0.4 0.6 0.8

50Ω

2.5V

I

D

S

-- V

MCH6403

DS

Drain-to-Source V oltage, VDS -- V

300

RDS(on) -- V

GS

2.0V

VGS=1.5V

IT01521

Ta=25°C

1.0

3.0

VDS=10V

2.5

2.0

-- A
D

1.5

1.0

Drain Current, I

0.5

0

0

250

I

-- V

D

GS

25°C

75°C

Ta= --25°C

0.5 1.0 1.5 2.0 2.5

Gate-to-Source V oltage, VGS -- V

IT01522

RDS(on) -- Ta

250

(on) -- mΩ

200

DS

150

ID=0.7A

100

50

Static Drain-to-Source

On-State Resistance, R

0

0123456

1.5A

Gate-to-Source V oltage, VGS -- V

78910

IT01523 IT01524

200

(on) -- mΩ

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 - -20 0 20 40 60 80 100 120 160140

=2.5V

GS

=0.7A, V

I

D

=1.5A, V

I

D

GS

=4.0V

Ambient Temperature, Ta -- °C

No.6780-2/4