Sanyo MCH6403 Specifications

Ordering number : ENN6780

MCH6403

N-Channel Silicon MOSFET

MCH6403

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2193

[MCH6403]

0.3

5

64

2

13

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Drain
2 : Drain
3 : Gate
4 : Source

Specifications

0.85

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.4 W

0.15

5 : Drain
6 : Drain

SANYO : MCPH6

20 V

±10 V

3A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 200 pF

Output Capacitance Coss VDS=10V , f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 45 pF

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=4V 80 105 mΩ
RDS(on)2 ID=0.7A, VGS=2.5V 110 155 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 3.3 4.8 S

Marking : KC Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2908

No.6780-1/4

MCH6403

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 27 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 1 nC
Diode Forward Voltage V

SD

See specified Test Circuit 45 ns

r

See specified Test Circuit 45 ns

f

IS=3A, VGS=0 0.87 1.2 V

Switching Time Test Circuit

VDD=10V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=6.67Ω

V

OUT

Ratings

min typ max

Unit

P.G

2.4

6.0V

2.2

4.0V

2.0

3.0V

1.8

1.6

-- A
D

1.4

8.0V

1.2

1.0

0.8

Drain Current, I

0.6

0.4

0.2
0

0 0.2 0.4 0.6 0.8

50Ω

2.5V

I

D

S

-- V

MCH6403

DS

Drain-to-Source V oltage, VDS -- V

300

RDS(on) -- V

GS

2.0V

VGS=1.5V

IT01521

Ta=25°C

1.0

3.0

VDS=10V

2.5

2.0

-- A
D

1.5

1.0

Drain Current, I

0.5

0

0

250

I

-- V

D

GS

25°C

75°C

Ta= --25°C

0.5 1.0 1.5 2.0 2.5

Gate-to-Source V oltage, VGS -- V

IT01522

RDS(on) -- Ta

250

(on) -- mΩ

200

DS

150

ID=0.7A

100

50

Static Drain-to-Source

On-State Resistance, R

0

0123456

1.5A

Gate-to-Source V oltage, VGS -- V

78910

IT01523 IT01524

200

(on) -- mΩ

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 - -20 0 20 40 60 80 100 120 160140

=2.5V

GS

=0.7A, V

I

D

=1.5A, V

I

D

GS

=4.0V

Ambient Temperature, Ta -- °C

No.6780-2/4

Forward Transfer Admittance, yfs -- S

Switching Time, SW Time -- ns

1.0

0.1

100

10

7
5

3
2

7
5

3
2

0.01

7
5

3

2

10

7
5

VDS=10V

2 3 5 7

VDD=10V
VGS=4V

td(off)

yfs -- I

Ta= --25°C

0.1

Drain Current, I

SW Time -- I

t

f

td(on)

t

r

D

25°C

75°C

2 3 5 7 2 3 5 7

D

1.0

-- A

IT01525

D

MCH6403

10

I

-- V

F

Ta=75°C

SD

Ciss

Coss

Crss

25°C

SD

--25°C

-- V

DS

10

7
5

3
2

1.0

7
5

-- A
F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001
0 0.40.30.20.1 0.5 0.6 0.7 0.8 0.9 1.0

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Ciss, Coss, Crss -- pF

1000

7
5

3
2

100

7
5

3
2

VGS=0

IT01526

f=1MHz

3

2 3 5 7

0.01 0.1

10

VDS=10V

9

ID=3A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0

2.0

-- W
D

1.5

1.4

2 3 5 7 2 3 5 7

Drain Current, I

D

1.0

-- A

VGS -- Qg

Total Gate Charge, Qg -- nC

P

-- Ta

D

Mounted on a ceramic board(900mm

IT01527

IT01529

10

10

7123456

0 2 4 6 8 1012141618

Drain-to-Source V oltage, V

3
2

I

=12A

DP

10

7
5

I

=3A

D

3

-- A

2

D

1.0
7
5

Operation in

3

this area is

2

limited by RDS(on).

0.1

Drain Current, I

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (900mm2✕0.8mm)

0.01
23 57 23 2357

0.1

A S O

1.0 10

Drain-to-Source V oltage, V

DS

10ms

100ms

DC operation

DS

-- V

<10µs

100µs

1ms

-- V

20

IT01528

IT02553

1.0

0.5

Allowable Power Dissipation, P

0020 40 60 80 100 120

Amibient Tamperature, Ta -- °C

2

✕0.8mm)

140 160

IT02554

No.6780-3/4

MCH6403

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.

No.6780-4/4

PS