SANYO MCH6402 Datasheet

Ordering number : ENN6972

Preliminary

MCH6402

N-Channel Silicon MOSFET

MCH6402

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2193A

[MCH6402]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

SANYO : MCPH6

Specifications

0.85

123

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 16 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W

30 V

±20 V

4A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=2A, VGS=10V 50 65 mΩ
RDS(on)2 ID=1A, VGS=4V 100 140 mΩ

=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=2A 2.4 3.5 S



Marking : KB Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73001 TS IM SATO TA-3229

No.6972-1/4

MCH6402

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 270 pF
Output Capacitance Coss VDS=10V , f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 55 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 24 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 28 ns

r

See specified Test Circuit 16 ns

f

IS=4A, VGS=0 0.84 1.2 V

Ratings

min typ max

Unit

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=10µs
D.C .≤1%

G

P.G

4.0

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.2

5V

6V

8V

10V

Drain-to-Source V oltage, V

250

200

(on) -- mΩ

150

DS

ID=1A

100

50

Static Drain-to-Source

On-State Resistance, R

0

012345678910

Gate-to-Source V oltage, V

50Ω

I

D

4V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

RDS(on) -- V

2A

-- V

VDD=15V

D

S

DS

DS

GS

GS

ID=2A
RL=7.5Ω

MCH6402

=3V

V

GS

-- V

-- V

V

OUT

IT03321

Ta=25°C

IT03323

I

-- V

-- A

3.0

2.5

2.0

D

VDS=10V

GS

D

1.5

1.0

Drain Current, I

0.5

Ta=75°C

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, V

160

140

120

(on) -- mΩ

100

DS

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

GS

=1A, V

I

D

=2A, V

I

D

=4V

GS

GS

=10V

Ambient Temperature, Ta -- °C

--25°C

-- V

No.6972-2/4

IT03322

IT03324