Sanyo MCH6401 Specifications

Ordering number : ENN6779

MCH6401

N-Channel Silicon MOSFET

MCH6401

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2193

[MCH6401]

0.3

5

64

2

13

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Drain
2 : Drain
3 : Gate
4 : Source

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 16 A
Mounted on a ceramic board (900mm2✕0.8mm)

0.85

0.15

5 : Drain
6 : Drain

SANYO : MCPH6

20 V

±10 V

4A

1.5 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 370 pF

Output Capacitance Coss VDS=10V , f=1MHz 120 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 80 pF

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=2A, VGS=4V 45 59 mΩ
RDS(on)2 ID=1A, VGS=2.5V 60 84 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=2A 4.3 6.2 S

min typ max

Marking : KA Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2907

No.6779-1/4

MCH6401

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 39 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 12 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.8 nC
Diode Forward Voltage V

SD

See specified Test Circuit 42 ns

r

See specified Test Circuit 40 ns

f

IS=4A, VGS=0 0.84 1.2 V

min typ max

Switching Time Test Circuit

Ratings

Unit

G

-- V

VDD=10V

DS

ID=2A
RL=5Ω

V

D

MCH6401

S

OUT

I

-- V

6

D

GS

VDS=10V

5

4

-- A

=1.5V

V

GS

D

3

V

IN
4V
0V

V

IN

PW=10µs
D.C.≤1%

P.G

4.0

3.5

3.5V

3.0

2.5

2.0

4.0V

6.0V

-- A
D

2.0V

I

D

3.0V

2.5V

50Ω

1.5

Drain Current, I

1.0

0.5

0

0 0.2 0.4 0.6 0.8

0.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

200

180

160

140

(on) -- mΩ

ID=1A

DS

120

100

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

0123456

RDS(on) -- V

2A

Gate-to-Source V oltage, V

-- V

DS

IT02605

GS

Ta=25°C

78910

-- V

GS

IT02607

1.0

2

Drain Current, I

1

0

0

120

100

(on) -- mΩ

80

0.5 1.0 1.5 2.0 2.5

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60

--40 --20 0 20 40 60 80 100 120 160140

75°C

--25°C

Ta=

25°C

Gate-to-Source V oltage, V

GS

RDS(on) -- Ta

=2.5V

GS

=1A, V

I

D

=2A, V

I

D

Ambient Temperature, Ta -- °C

GS

=4.0V

-- V

No.6779-2/4

IT02606

IT02608