SANYO MCH6307 Datasheet
Ordering number : ENN7080
Preliminary
MCH6307
P-Channel Silicon MOSFET
MCH6307
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
Package Dimensions
unit : mm
2193A
[MCH6307]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
0.15
654
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
Specifications
0.85
123
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --20 A
Mounted on a ceramic board (900mm2✕0.8mm)
Mounted on an FR4 board, PW≤3s
--12 V
±8V
--5 A
1.5 W
2.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--3A, VGS=--4.5V 35 46 mΩ
RDS(on)2 ID=--1.5A, VGS=--2.5V 47 66 mΩ
RDS(on)3 ID=--0.3A, VGS=--1.8V 68 98 mΩ
=--1mA, VGS=0 --12 V
VDS=--12V, VGS=0 --10 µA
VGS=±6.4V, VDS=0 ±10 µA
VDS=--6V, ID=--3A 5.8 8.5 S
Marking : JG Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3374
No.7080-1/4
MCH6307
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--6V, f=1MHz 940 pF
Output Capacitance Coss VDS=--6V, f=1MHz 230 pF
Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 180 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 71 ns
Fall Time t
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--5A 11 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--5A 1.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--5A 2.8 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 143 ns
r
See specified Test Circuit. 89 ns
f
IS=--5A, VGS=0 --0.85 --1.5 V
Switching Time Test Circuit
VDD= --6V
V
IN
0V
--4.5V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --3A
RL=2Ω
V
OUT
Ratings
min typ max
Unit
P.G
I
--5.0
--4.5
--4.0
--3.5
-- A
D
--3.0
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
--3.0V
--3.5V
--4.5V
0
0
--0.2
D
--2.5V
--1.8V
--1.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, V
RDS(on) -- V
--1.5A
--3.0A
(on) -- mΩ
DS
160
140
120
100
80
ID= --0.3A
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source V oltage, V
50Ω
-- V
DS
DS
GS
GS
S
V
-- V
-- V
MCH6307
= --1.0V
GS
Ta=25°C
--7 -- 8
IT03865
IT03867
I
-- V
--9
VDS= --6V
--8
--7
--6
-- A
D
--5
--4
--3
Drain Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
D
Gate-to-Source V oltage, V
120
100
(on) -- mΩ
80
DS
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.3A, V
I
D
= --1.5A, V
I
D
= --3.0A, V
I
D
GS
Ta=75°C
GS
GS
GS
--25°C
GS
= --1.8V
= --2.5V
= --4.5V
Ambient Temperature, Ta -- °C
25°C
-- V
No.7080-2/4
IT03866
IT03868
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