SANYO MCH6303 Datasheet
Ordering number : ENN6778
MCH6303
P-Channel Silicon MOSFET
MCH6303
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2193
[MCH6303]
0.3
5
64
2
13
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
Specifications
0.85
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --8 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.4 W
0.15
5 : Drain
6 : Drain
SANYO : MCPH6
--20 V
±10 V
--2 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 275 pF
Output Capacitance Coss VDS=--10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 35 pF
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1A, VGS=--4V 175 230 mΩ
RDS(on)2 ID=--0.5A, VGS=--2.5V 260 360 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--1A 1.7 2.5 S
min typ max
Marking : JC Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1500 TS IM TA-2906
No.6778-1/4
MCH6303
Continued from preceding page.
Parameter Symbol Conditions
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 22 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 7.2 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 0.9 nC
Diode Forward Voltage V
SD
See specified Test Circuit 35 ns
r
See specified Test Circuit 16 ns
f
IS=--2A, VGS=0 --0.86 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --1A
RL=10Ω
V
OUT
Ratings
Unit
P.G
--1.6
--1.4
--1.2
--6.0V
-- A
--1.0
D
Drain Current, I
--0.8
--0.6
--0.4
--0.2
--8.0V
0
0
50Ω
--3.0V
--2.5V
--0.4
Drain-to-Source V oltage, VDS -- V
700
600
500
(on) -- mΩ
DS
400
ID= --0.5A
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6
--1.0A
Gate-to-Source V oltage, VGS -- V
MCH6303
S
I
-- V
D
DS
--4.0V
--2.0V
RDS(on) -- V
= --1.5V
V
GS
--1.0 --1.6--0.2 --0.6 --0.8 --1.2 --1.4
GS
Ta=25°C
--7 --8 --9 --10
IT01632
IT01634
--1.6
--1.4
--1.2
-- A
--1.0
D
--0.8
--0.6
Drain Current, I
--0.4
D
GS
I
-- V
25°C
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Ta=75°C
--25°C
Gate-to-Source V oltage, VGS -- V
500
450
400
350
(on) -- mΩ
DS
300
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
--60
--40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --2.5V
= --1.0A, V
GS
GS
= --0.5A, V
I
D
I
D
= --4.0V
Ambient Temperature, Ta -- °C
VDS= --10V
IT01633
IT01635
No.6778-2/4
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