SANYO MCH6302 Datasheet
Ordering number : ENN7132
Preliminary
MCH6302
P-Channel Silicon MOSFET
MCH6302
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2193A
[MCH6302]
546
1
2.0
0.3
0.07
2.1
0.250.25
1.6
32
0.65
(Bottom view)
0.15
654
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Specifications
0.85
123
(Top view)
SANYO : MCPH6
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --12 A
Mounted on a ceramic board (900mm2✕0.8mm)
--30 V
±20 V
--3 A
1.5 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.5A, VGS=--10V 85 110 mΩ
RDS(on)2 ID=--0.7A, VGS=--4V 150 210 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1.5A 1.9 2.8 S
Marking : JB Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3228
No.7132-1/4
MCH6302
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 370 pF
Output Capacitance Coss VDS=--10V, f=1MHz 100 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 65 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 32 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3.0A 8.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3.0A 1.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3.0A 1.8 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 20 ns
r
See specified Test Circuit. 31 ns
f
IS=--3.0A, VGS=0 --0.85 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --1.5A
RL=10.0Ω
D
V
OUT
0V
--10V
PW=10µs
D.C .≤1%
V
IN
V
IN
Ratings
min typ max
Unit
--3.0
--2.5
-- A
--2.0
D
--1.5
--1.0
Drain Current, I
--0.5
0
0
300
250
P.G
--8V
--6V
I
D
50Ω
-- V
--4V
--5V
--10V
--0.2
--0.4 --0.6 --0.8 --1.0
Drain-to-Source V oltage, V
RDS(on) -- V
DS
V
GS
= --3V
DS
GS
S
-- V
MCH6302
IT04035
Ta=25°C
I
-- V
--3.0
--2.5
-- A
--2.0
VDS= --10V
D
D
--1.5
--1.0
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --3.5 --4.0--2.5 --3.0
Gate-to-Source V oltage, V
300
250
RDS(on) -- Ta
GS
Ta=75°C
--25°C
GS
25°C
-- V
IT04036
200
(on) -- mΩ
DS
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6
ID= --0.7A
Gate-to-Source V oltage, V
--1.5A
--7 --8 --9 --10
IT04037
-- V
GS
(on) -- mΩ
200
DS
= --0.7A, V
I
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
D
= --1.5A, V
I
D
GS
GS
= --4V
= --10V
Ambient Temperature, Ta -- °C
IT04038
No.7132-2/4
Loading...