Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6480
MCH6102/MCH6202
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products (mounting height : 0.85mm).
· High allowable power dissipation.
Specifications
( ) : MCH6102
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (600mm2×0.8mm)
C
Package Dimensions
unit:mm
2177
[MCH6102/MCH6202]
0.3
5
64
2
13
0.65
2.0
0.15
0.250.25
1.6
2.1
0.85
0.15
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : MCPH6
04)03–(V
03)–(V
5)–(V
5.1)–(A
3)–(A
003)–(Am
0.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
h
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
BC
I,V03)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am001)–(=
Am003)–(=
zHM1=f,V01)–(=
83100TS (KOTO) TA-2843 No.6480–1/5
sgnitaR
nimpytxam
002065
)054(zHM
005zHM
8)9(Fp
Continued on next page.
tinU
MCH6102/MCH6202
Continued from preceding page.
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egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
B1
I
INPUT
PW=20µs
D.C.≤1%
50Ω
B2
R
B
V
R
+
100µF 470µF
OUTPUT
+
EC
EB
no
gts
f
RL=16Ω
)tas(I
C
)tas(I
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am057)–(=
B
I,Am057)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am51)–(=
Am51)–(=58.0)–(2.1)–(V
0=
=∞ 03)–(V
0=5)–(V
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
sgnitaR
nimpytxam
)052–()573–(Vm
051522Vm
)03–(V
04V
53)73(sn
)511(sn
502sn
23)62(sn
tinU
VCC=12VVBE= --5V
(For PNP, the polarity is reversed.)
20IB1= --20IB2= IC=750mA
I
-- V
--2.0
--1.6
C
MCH6102
--8mA
CE
--6mA
–A
C
--1.2
--0.8
Collector Current, I
--0.4
0
0 --200 --400 --600 --800 --1000
Collector-to-Emitter Voltage, VCE–mV
I
-- V
C
--1.6
--1.4
--1.2
MCH6102
VCE= --2V
BE
–A
C
--1.0
--50mA
--40mA
--30mA
--20mA
--15mA
--10mA
--4mA
--2mA
IB=0
IT01872
2.0
1.6
C
MCH6202
50mA
40mA
CE
30mA
8mA
I
-- V
–A
C
1.2
0.8
Collector Current, I
0.4
0
0 200 400 600 800 1000
Collector-to-Emitter Voltage, VCE–mV
1.6
MCH6202
VCE=2V
1.4
1.2
C
BE
I
-- V
–A
1.0
C
20mA
15mA
10mA
6mA
4mA
2mA
IB=0
IT01873
--0.8
--0.6
°C
Ta=75
25
°C
--0.4
Collector Current, I
--0.2
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE–V
°C
--25
IT01874
0.8
0.6
Ta=75°C
25
°C
0.4
Collector Current, I
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE–V
°C
--25
IT01875
No.6480–2/5