Sanyo MCH5803 Specifications

Ordering number : ENN6958

MCH5803

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

MCH5803

DC / DC Converter Applications

Features

•

Composite type with an N-Channel Sillicon MOSFET
(MCH3408) and a Schottky Barrier Diode (SBS006M)
contained in one package facilitating high-density
mounting.

[MOSFET]

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

[SBD]

• Short reverse recovery time

• Low forward voltage

.

.

Package Dimensions

unit : mm

2195

[MCH5803]

0.3

5

132

2.0

2.1

0.250.25

4

1.6

0.65

(Bottom view)

0.15

0.07

1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain

0.85

SANYO : MCPH5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature Tstg --55 to +125 °C

Marking : QC

DSS
GSS

D

DP

D

RRM
RSM

O

FSM

PW≤10µs, duty cycle≤1% 5.6 A
Mounted on a ceramic board (600mm2✕0.8mm) 1unit

50Hz sine wave, 1 cycle 10 A

30 V

±20 V

1.4 A

0.8 W

30 V
30 V

0.5 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM IWAIDA TA-3177

No.6958-1/5

MCH5803

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

[MOSFET]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 70 pF

Output Capacitance Coss VDS=10V , f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 10 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 2.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.4A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.4A 0.5 nC
Diode Forward Voltage V
[SBD]
Reverse Voltage V

Forward Voltage
Reverse Current I

Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=700mA, VGS=10V 230 300 mΩ
RDS(on)2 ID=400mA, VGS=4V 370 520 mΩ

r

f

SD

R

VF1I
VF2I

R

rr

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=700mA 0.85 1.2 S

See specified Test Circuit 3 ns

See specified Test Circuit 4 ns

IS=1.4A, VGS=0 0.9 1.2 V

IR=0.5mA 30 V

=0.3A 0.35 0.40 V

F

=0.5A 0.42 0.47 V

F

VR=10V 200 µA

IF=IR=100mA, See specified Test Circuit. 10 ns

min typ max

Ratings

Unit

Electrical Connection (Top view)

DC

G : Gate
S : Source
A : Anode
C : Cathode
D : Drain

GSA

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

G

50Ω

VDD=15V

ID=700mA
RL=21.4Ω

D

S

V

OUT

MCH5803

Duty≤10%

50Ω 100Ω 10Ω

10µs

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

V

IN

--5V

100mA100mA

10mA

t

rr

No.6958-2/5

2.0

1.5

-- A
D

1.0

Drain Current, I

0.5

0

0

800

700

I

-- V

D

8V

DS

6V

10V

0.2

0.4 0.6 0.8 1.0

Drain-to-Source V oltage, V

RDS(on) -- V

5V

DS

GS

MCH5803

[MOSFET] [MOSFET]

1.4

1.2

VDS=10V

4V

1.0

-- A
D

0.8

=3V

V

GS

-- V

IT03097

[MOSFET] [MOSFET]

Ta=25°C

0.6

0.4

Drain Current, I

0.2

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, V

800

700

I

-- V

D

GS

Ta=75°C

RDS(on) -- Ta

--25°C

GS

75°C

-- V

Ta= --25°C

25°C

75°C

IT03098

600

(on) -- mΩ

500

DS

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

021436587109

ID=0.4A

Gate-to-Source V oltage, V

10

7
5

fs -- S

y

3
2

0.7A

yfs -- I

-- V

GS

D

[MOSFET] [MOSFET]

VDS=10V

25°C

1.0
7
5

3
2

°C

Ta=75

--25°C

Forward Transfer Admittance, 

0.1

23 57 23 57

0.01 0.1

5

3

2

10

7
5

3

2

Switching Time, SW Time -- ns

Drain Current, I

SW Time -- I

t

(off)

d

t

f

td(on)

t

D

r

1.0

-- A

D

23 57

[MOSFET] [MOSFET]

VDD=15V
VGS=10V

IT03099

IT03101

600

(on) -- mΩ

500

DS

=0.4A, V

I

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

=0.7A, V

I

D

Ambient Temperature, Ta -- °C

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

10

0 0.2 0.4 0.6 0.8 1.0 1.41.2

I

Diode Forward V oltage, V

100

Ciss, Coss, Crss -- V

7
5

3
2

F

Ta=75°C

-- V

25°C

Ciss

GS

- -25°C

=4V

GS

SD

=10V

SD

DS

-- V

IT03100

VGS=0

IT03102

f=1MHz

Coss

Ciss, Coss, Crss -- pF

10

7
5

3
2

Crss

1.0
5

7572233

0.1 1.0

Drain Current, I

D

-- A

IT03103

1.0
0 5 10 15 20 25 30

Drain-to-Source V oltage, V

DS

-- V

No.6958-3/5

IT03104

10

VDS=10V

VGS -- Qg

ID=1.4A

8

-- V
GS

6

4

2

Gate-to-Source V oltage, V

0

0 0.5 1.0 1.5 2.0 2.5

Total Gate Charge, Qg -- nC

P

-- Ta

1.0

-- W
D

0.8

0.6

Mounted on a ceramic board(600mm

D

[MOSFET]

IT03105

[MOSFET]

MCH5803

10

I

=5.6A

7

DP

5
3

2

I

=1.4A

D

1.0

-- A

7

D

5
3

2

0.1
7

Drain Current, I

5
3

Ta=25°C

2

Single pulse
Mounted on a ceramic board(600mm2✕0.8mm) 1unit

0.01

Operation in this
area is limited by RDS(on).

23 57 23 571023 5

0.1

A S O

23 57

DC operation

1.00.01

Drain-to-Source V oltage, V

10ms

100ms

DS

[MOSFET]

1ms

-- V

<10µs

100

µs

IT03106

0.4

0.2

Allowable Power Dissipation, P

0020 40

Ambient Temperature, Ta -- °C

10

7
5

3
2

-- A

1.0

F

7
5

3

100°C

2

0.1
7

Forward Current, I

5
3

2

0.01
0

Diode Forward V oltage, V

0.4

(1) Rectangular wave θ=60°

-- W

(2) Rectangular wave θ=120°

0.35

(3) Rectangular wave θ=180°

(AV)

F

(4) Sine wave θ=180°

0.3

0.25

2

✕0.8mm) 1unit

60 80 100 120 140 160

I

-- V

F

F

Ta=125°C

25°C

50°C

75°C

0.6

-- V

P

F(AV)

-- I

SD

O

(4)

(2)

(1)

IT03107

I

[SBD] [SBD]

0.80.4 1.00.2

IT00632

[SBD] [SBD]

(3)

100

7
5

3
2

10

7

Ta=125°C

5

-- mA

3

R

2

1.0
7
5

3
2

0.1

Reverse Current, I

7
5

3
2

0.01
0

100

7
5

-- pF

3
2

100°C

Reverse Voltage, V

R

75°C

50°C

25°C

C -- V

-- V

R

-- V

R

R

3015 2552010

IT00633

f=1MHz

0.2

0.15

0.1

0.05

0

Average Forward Power Dissipation, P

0

0.1 0.2 0.3 0.4

Sine wave

Average Forward Current, I

Rectangular wave

θ

360°

180°

360°

0.5 0.6 0.7

IT00634 IT00635

-- A

O

10

7
5

3
2

Interterminal Capacitance, C

1.0

1.0 10

2

357 2357

Reverse Voltage, VR -- V

100

No.6958-4/5

12

-- A

10

(Peak)

8

FSM

6

4

2

Surge Forward Current, I

0

7

0.01

IS -- t

Current waveform 50Hz sine wave

I

23 7

52 237

0.1

Time, t -- s

MCH5803

[SBD]

S

20ms

t

5

1.0

3

IT00636

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.

No.6958-5/5

PS