SANYO MCH5802 Datasheet
Ordering number : ENN6961
MCH5802
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
MCH5802
DC / DC Converter Applications
Features
•
Composite type with a P-Channel Sillicon MOSFET
(MCH3308) and a Schottky Barrier Diode (SBS006M)
contained in one package facilitating high-density
mounting.
[MOSFET]
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD]
• Short reverse recovery time
• Low forward voltage
.
.
Package Dimensions
unit : mm
2195
[MCH5802]
2.0
0.3
5
132
0.07
0.85
2.1
0.250.25
4
1.6
0.65
0.15
54
123
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature Tstg --55 to +125 °C
Marking : QB
DSS
GSS
D
DP
D
RRM
RSM
O
FSM
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
50Hz sine wave, 1 cycle 10 A
--30 V
±20 V
--1 A
0.8 W
30 V
30 V
0.5 A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-3176
No.6961-1/5
MCH5802
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 80 pF
Output Capacitance Coss VDS=--10V, f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 13 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 15 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.6 nC
Diode Forward Voltage V
[SBD]
Reverse Voltage V
Forward Voltage
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--10V 430 560 mΩ
RDS(on)2 ID=--300mA, VGS=--4V 780 1090 mΩ
r
f
SD
R
VF1I
VF2I
R
rr
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 570 820 mS
See specified Test Circuit 20 ns
See specified Test Circuit 7 ns
IS=--1A, VGS=0 --0.9 --1.5 V
IR=0.5mA 30 V
=0.3A 0.35 0.40 V
F
=0.5A 0.42 0.47 V
F
VR=10V 200 µA
IF=IR=100mA, See specified Test Circuit. 10 ns
Ratings
min typ max
Unit
Electrical Connection (Top view)
DC
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
GSA
Switching Time Test Circuit trr Test Circuit
[MOSFET] [SBD]
0V
--10V
PW=10µs
D.C.≤1%
G
VDD= --15V
ID= --500mA
RL=30Ω
D
V
OUT
V
IN
V
IN
Duty
10µs
≤10%
50Ω 100Ω 10Ω
--5V
100mA100mA
10mA
t
rr
P.G
50Ω
MCH5802
S
No.6961-2/5
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