Sanyo MCH3408 Specifications

Ordering number : ENN7011

MCH3408

N-Channel Silicon MOSFET

MCH3408

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2167A

[MCH3408]

0.65

2.0

0.3

3

12

0.07

2.1

0.250.25

1.6

0.15

3

1 : Gate
2 : Source
3 : Drain

Specifications

0.85

12

SANYO : MCPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 5.6 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W

30 V

±20 V

1.4 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=700mA, VGS=10V 230 300 mΩ
RDS(on)2 ID=400mA, VGS=4V 400 560 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=700mA 0.77 1.1 S

Marking : KH Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71801 TS IM TA-3227

No.7011-1/4

MCH3408

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 65 pF
Output Capacitance Coss VDS=10V , f=1MHz 14 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 8 pF
Turn-ON Delay Time td(on) See specified Test Circuit 5 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 11 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 2.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.4A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.4A 0.3 nC
Diode Forward Voltage V

SD

See specified Test Circuit 4 ns

r

See specified Test Circuit 3 ns

f

IS=1.4A, VGS=0 0.87 1.2 V

Switching Time Test Circuit

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

VDD=15V

ID=700mA
RL=21.4Ω

D

G

V

OUT

Ratings

min typ max

Unit

2.0

1.5

-- A
D

1.0

Drain Current, I

0.5

0

0

800

700

P.G

I

D

50Ω

-- V

10V

8V

0.2

0.4 0.6 0.8 1.0

Drain-to-Source V oltage, V

RDS(on) -- V

DS

6V

5V

DS

GS

S

4V

V

-- V

MCH3408

=3V

GS

IT03294

Ta=25°C

I

-- V

D

1.4

VDS=10V

1.2

1.0

-- A
D

0.8

0.6

0.4

Drain Current, I

0.2

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, V

800

700

RDS(on) -- Ta

GS

Ta=75°C

25°C

GS

--25°C

-- V

Ta= --25°C

75°C

25°C

IT03295

600

(on) -- mΩ

500

DS

ID=0.4A

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

234 6785910

0.7A

Gate-to-Source V oltage, V

GS

-- V

IT03296

600

(on) -- mΩ

500

DS

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

=0.4A, V

I

D

=0.7A, V

I

D

GS

GS

=4V

=10V

Ambient Temperature, Ta -- °C

IT03297

No.7011-2/4