Ordering number : ENN7007
MCH3307
P-Channel Silicon MOSFET
MCH3307
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2167A
[MCH3307]
0.65
2.0
0.3
3
12
0.07
2.1
0.250.25
1.6
0.15
3
1 : Gate
2 : Source
3 : Drain
Specifications
0.85
12
SANYO : MCPH3
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W
--20 V
±10 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--4V 380 500 mΩ
RDS(on)2 ID=--300mA, VGS=--2.5V 540 760 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.84 1.2 S
Marking : JG Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3312
No.7007-1/4
MCH3307
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 115 pF
Output Capacitance Coss VDS=--10V, f=1MHz 23 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 15 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1A 1.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1A 0.3 nC
Diode Forward Voltage V
SD
See specified Test Circuit 6 ns
r
See specified Test Circuit 7 ns
f
IS=--1A, VGS=0 --0.89 --1.2 V
Switching Time Test Circuit
Ratings
min typ max
Unit
G
50Ω
-- V
--2.5V
VDD= --10V
D
S
DS
--2.0V
DS
GS
GS
V
IN
0V
--4V
V
IN
PW=10µs
D.C .≤1%
P.G
I
--4.0V
D
--3.0V
--1.0
--0.9
--0.8
--0.7
-- A
D
--0.6
--0.5
--0.4
--0.3
Drain Current, I
--0.2
--0.1
0
0
--0.1
--0.2 --0.3 --0.4 --1.0--0.5 --0.6 --0.7 --0.8 --0.9
Drain-to-Source V oltage, V
1000
900
800
700
(on) -- mΩ
ID= --0.3A
600
DS
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --2 --4 --6 --8 --10
RDS(on) -- V
--0.5A
Gate-to-Source V oltage, V
ID= --500mA
RL=20Ω
V
OUT
MCH3307
= --1.5V
V
GS
-- V
Ta=25°C
-- V
IT03501
IT03503
I
-- V
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
D
25°C
Gate-to-Source V oltage, V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.3A, V
I
D
= --0.5A, V
I
D
Ta=75°C
--25°C
GS
= --2.5V
GS
GS
Ta= --25
GS
= --4.0V
Ambient Temperature, Ta -- °C
°C
75°C
25°C
-- V
No.7007-2/4
IT03502
IT03504
yfs -- I
fs -- S
y
1.0
3
2
7
5
3
2
Ta= --25°C
75
D
25°C
°C
Forward Transfer Admittance,
0.1
--0.01 --0.1
3
2
100
7
5
3
2
10
7
5
3
Switching Time, SW Time -- ns
2
1.0
--0.1 --1.0
--4.0
--3.5
-- V
--3.0
23 57 23 57
Drain Current, I
D
-- A
SW Time -- I
VDD= --10V
4V
VGS= --
t
(off)
d
td(on)
t
f
23 57 23
t
r
Drain Current, I
D
-- A
VGS -- Qg
VDS= --10V
ID= --1A
GS
--2.5
--2.0
--1.5
--1.0
Gate-to-Source V oltage, V
--0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.61.4
Total Gate Charge, Qg -- nC
P
-- Ta
1.0
D
D
VDS= --10V
IT03505
IT03507
IT03509
MCH3307
--1.0
I
-- V
F
--25°C
SD
SD
-- V
DS
--10
7
5
3
2
-- A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.1--1.0 --1.2
Ta=75°C
25°C
Diode Forward V oltage, V
3
2
Ciss, Coss, Crss -- V
Ciss
100
7
5
3
Ciss, Coss, Crss -- pF
2
10
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
Drain-to-Source V oltage, V
--10
7
I
= --4A
5
DP
3
2
I
= --1A
D
--1.0
-- A
7
D
5
3
2
--0.1
7
Drain Current, I
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)
--0.01
Operation in this area
is limited by RDS(on).
--0.1--0.01 --1.0
Drain-to-Source V oltage, V
Coss
Crss
A S O
-- V
DS
<10µs
1ms
10ms
100ms
DC operation
23 5723 5723 57
-- V
DS
VGS=0
IT03506
f=1MHz
IT03508
100µs
--10
IT03510
32
-- W
0.8
D
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board(900mm
2
✕0.8mm)
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03511
No.7007-3/4
MCH3307
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject
to change without notice.
No.7007-4/4
PS
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