Sanyo MCH3307 Specifications
Ordering number : ENN7007
MCH3307
P-Channel Silicon MOSFET
MCH3307
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2167A
[MCH3307]
0.65
2.0
0.3
3
12
0.07
2.1
0.250.25
1.6
0.15
3
1 : Gate
2 : Source
3 : Drain
Specifications
0.85
12
SANYO : MCPH3
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W
--20 V
±10 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--4V 380 500 mΩ
RDS(on)2 ID=--300mA, VGS=--2.5V 540 760 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.84 1.2 S
Marking : JG Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3312
No.7007-1/4
MCH3307
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 115 pF
Output Capacitance Coss VDS=--10V, f=1MHz 23 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 15 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1A 1.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1A 0.3 nC
Diode Forward Voltage V
SD
See specified Test Circuit 6 ns
r
See specified Test Circuit 7 ns
f
IS=--1A, VGS=0 --0.89 --1.2 V
Switching Time Test Circuit
Ratings
min typ max
Unit
G
50Ω
-- V
--2.5V
VDD= --10V
D
S
DS
--2.0V
DS
GS
GS
V
IN
0V
--4V
V
IN
PW=10µs
D.C .≤1%
P.G
I
--4.0V
D
--3.0V
--1.0
--0.9
--0.8
--0.7
-- A
D
--0.6
--0.5
--0.4
--0.3
Drain Current, I
--0.2
--0.1
0
0
--0.1
--0.2 --0.3 --0.4 --1.0--0.5 --0.6 --0.7 --0.8 --0.9
Drain-to-Source V oltage, V
1000
900
800
700
(on) -- mΩ
ID= --0.3A
600
DS
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --2 --4 --6 --8 --10
RDS(on) -- V
--0.5A
Gate-to-Source V oltage, V
ID= --500mA
RL=20Ω
V
OUT
MCH3307
= --1.5V
V
GS
-- V
Ta=25°C
-- V
IT03501
IT03503
I
-- V
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
D
25°C
Gate-to-Source V oltage, V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.3A, V
I
D
= --0.5A, V
I
D
Ta=75°C
--25°C
GS
= --2.5V
GS
GS
Ta= --25
GS
= --4.0V
Ambient Temperature, Ta -- °C
°C
75°C
25°C
-- V
No.7007-2/4
IT03502
IT03504
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