Ordering number : ENN6431A
Preliminary
MCH3301
P-Channel Silicon MOSFET
MCH3301
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2167A
[MCH3301]
0.250.25
2.1
1.6
0.3
3
0.65
2.0
(Bottom view)
12
0.07
0.15
3
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Specifications
0.85
12
(Top view)
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W
--20 V
±10 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--4V 400 520 mΩ
RDS(on)2 ID=--300mA, VGS=--2.5V 600 840 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.9 1.3 S
min typ max
Marking : JA Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71002 TS IM TA-3604 / 30300TS (KOTO) TA-2508
No.6431-1/4
MCH3301
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 100 pF
Output Capacitance Coss VDS=--10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 27 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 1 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 25 ns
r
See specified Test Circuit. 32 ns
f
IS=--1A, VGS=0 --0.9 --1.5 V
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --500mA
RL=20Ω
V
OUT
Ratings
min typ max
Unit
P.G
--1.6
--1.4
--1.2
-- A
--1.0
D
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--8.0V
--10.0V
--0.2
Drain-to-Source V oltage, VDS -- V
1000
900
800
700
(on) -- mΩ
DS
600
ID= --0.3A
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
--0.5A
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
I
D
50Ω
-- V
--6.0V
DS
--4.0V
S
MCH3301
--3.0V
--2.5V
--2.0V
VGS= --1.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
IT00871
GS
Ta=25°C
--7 --8 --9 --10
IT00873
--3.0
--2.5
--2.0
-- A
D
--1.5
--1.0
D
VDS= --10V
GS
Ta= --25°C
75°C
I
-- V
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, VGS -- V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--60
--40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
= --2.5V
GS
= --0.3A, V
I
D
= --4.0V
= --0.5A, V
I
D
GS
25°C
IT00872
IT00874
No.6431-2/4