Page 1
Ordering number : ENN6431A
Preliminary
MCH3301
P-Channel Silicon MOSFET
MCH3301
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2167A
[MCH3301]
0.250.25
2.1
1.6
0.3
3
0.65
2.0
(Bottom view)
12
0.07
0.15
3
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Specifications
0.85
12
(Top view)
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W
--20 V
±10 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--4V 400 520 mΩ
RDS(on)2 ID=--300mA, VGS=--2.5V 600 840 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.9 1.3 S
min typ max
Marking : JA Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71002 TS IM TA-3604 / 30300TS (KOTO) TA-2508
No.6431-1/4
Page 2
MCH3301
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 100 pF
Output Capacitance Coss VDS=--10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 27 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 1 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 25 ns
r
See specified Test Circuit. 32 ns
f
IS=--1A, VGS=0 --0.9 --1.5 V
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --500mA
RL=20Ω
V
OUT
Ratings
min typ max
Unit
P.G
--1.6
--1.4
--1.2
-- A
--1.0
D
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--8.0V
--10.0V
--0.2
Drain-to-Source V oltage, VDS -- V
1000
900
800
700
(on) -- mΩ
DS
600
ID= --0.3A
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
--0.5A
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
I
D
50Ω
-- V
--6.0V
DS
--4.0V
S
MCH3301
--3.0V
--2.5V
--2.0V
VGS= --1.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
IT00871
GS
Ta=25°C
--7 --8 --9 --10
IT00873
--3.0
--2.5
--2.0
-- A
D
--1.5
--1.0
D
VDS= --10V
GS
Ta= --25°C
75°C
I
-- V
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, VGS -- V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--60
--40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
= --2.5V
GS
= --0.3A, V
I
D
= --4.0V
= --0.5A, V
I
D
GS
25°C
IT00872
IT00874
No.6431-2/4
Page 3
MCH3301
I
5
3
-- S
2
yfs
1.0
7
5
3
2
yfs -- I
Ta= --25°C
Forward Transfer Admittance,
0.1
--0.01
23 57
--0.1
Drain Current, ID -- A
5
3
2
100
7
5
3
2
10
7
Switching Time, SW Time -- ns
5
3
2
357
SW Time -- I
23 57 23 5
--0.1
Drain Current, I
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
0
VDS= --10V
ID= --1A
VGS -- Qg
Total Gate Charge, Qg -- nC
P
1.2
D
D
VDS= --10V
25°C
75°C
23 57 23 5
--1.0
IT00875
D
VDD= --10V
VGS= --4V
t
r
t
f
t
d
(off)
td(on)
--1.0
D
-- A
IT00877
5.03.0 4.01.0 2.0 4.52.5 3.50.5 1.5
IT00879
-- Ta
--10
7
5
3
2
--1.0
-- A
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward V oltage, VSD -- V
Ciss, Coss, Crss -- V
--4 --6
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
010--2
Drain-to-Source V oltage, V
--10
7
I
= --4A
5
DP
3
2
I
= --1A
D
--1.0
-- A
7
D
5
3
2
Operation in this
area is limited by RDS(on).
--0.1
7
Drain Current, I
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(900mm
--0.01
23 57 23 57 2 3 5
--0.1
Drain-to-Source V oltage, V
-- V
F
SD
25°C
--25°C
Ta=75°C
DS
Ciss
Coss
Crss
--8 --20--10 --12 --14 --16 --18
-- V
DS
A S O
1ms
10ms
100ms
DC operation
2
✕0.8mm)
--1.0 --10
DS
-- V
VGS=0
IT00876
f=1MHz
IT00878
100µs
IT00880
1.0
-- W
D
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board(900mm
2
✕0.8mm)
60
80 100 120
Ambient Temperature, Ta -- °C
140 160
IT00881
No.6431-3/4
Page 4
MCH3301
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject
to change without notice.
No.6431-4/4
PS
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