Sanyo MCH3301 Specifications

Ordering number : ENN6431A

MCH3301

P-Channel Silicon MOSFET

MCH3301

Ultrahigh-Speed Switching Applications

Features	Package Dimensions
• Low ON resistance.	unit : mm

•	Ultrahigh-speed switching.	2167A
•	2.5V drive.					[MCH3301]
			0.25		0.3	0.15
				3
		2.1	1.6
			0.25	2	1	0.07
				0.65
				2.0		3
				(Bottom view)

1 : Gate

0.85

2 : Source

3 : Drain

1

2

Specifications

(Top view) SANYO : MCPH3

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--1

A

Drain Current (Pulse)

IDP

PW£10ms, duty cycle£1%

--4

A

Allowable Power Dissipation

PD

Mounted on a ceramic board (900mm2 0.8mm)

1

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0

--10

mA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0

±10

mA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--0.4

--1.4

V

Forward Transfer Admittance

½yfs½

VDS=--10V, ID=--500mA

0.9

1.3

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--500mA, VGS=--4V

400

520

mW

RDS(on)2

ID=--300mA, VGS=--2.5V

600

840

mW

Marking : JA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71002 TS IM TA-3604 / 30300TS (KOTO) TA-2508 No.6431-1/4

MCH3301

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=--10V, f=1MHz			100		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz			60		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz			25		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			10		ns
Rise Time	tr	See specified Test Circuit.			25		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			27		ns
Fall Time	tf	See specified Test Circuit.			32		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--1A			5		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--1A			1		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--1A			1		nC
Diode Forward Voltage	VSD	IS=--1A, VGS=0			--0.9	--1.5	V

Switching Time Test Circuit

VDD= --10V

VIN

			0V													ID= --500mA
		--4V
																RL=20Ω
			PW=10μs							VIN					D			VOUT
			D.C.≤ 1%								G
			P.G							50Ω
															S		MCH3301
	--1.6									ID -- VDS
								.	0V		6	.	0V		.0V
	--1.4				--	8				--				--	4
															.0V
															3
	--1.2								0V						--
-- A																		.5V
					10		.										--
	--1.0			--
D
I
Current,	--0.8
	--0.6																	--2.0V
Drain
	--0.4
	--0.2																VGS= --1.5V
	0	--0.1	--0.2		--0.3					--0.4		--0.5			--0.6	--0.7	--0.8	--0.9 --1.0
	0

			Drain-to-Source Voltage, VDS									-- V		IT00871
	1000				RDS(on) -- VGS
														Ta=25°C
mΩ	900
	800
--
(on)	700
DS600					--	0.5A
Source-to-DrainStatic Resistance,State-OnR	500	ID= --0.3A
	400
	300
	200
	100
	0
	0	--1 --2 --3 --4 --5 --6 --7										--8		--9 --10
			Gate-to-Source Voltage, VGS									-- V		IT00873

	--3.0											ID -- VGS
			VDS= --10V
	--2.5
A																					25	°	C						25	°	C
																				--
--	--2.0
																		Ta=							°		C
I
D																								75
Current,	--1.5
Drain
	--1.0
	--0.5
	0
	0			--0.5				--1.0			--1.5					--2.0		--2.5							--3.0						--3.5			--4.0
							Gate-to-Source Voltage, VGS -- V																									IT00872
	1000									RDS(on)								-- Ta
mΩ	900
	800
--																						.5V
																					2
																		--
(on)	700														.	3A,		=
																	VGS
														0
DS600										D		--
												=
Source-to-DrainStatic Resistance,State-OnR										I
																								.0V
																							4
																		=--
	500																VGS
																.5A,
															0
										I		=		--
	400										D
	300
	200
	100
	0
	--60			--40 --20				0			20				40 60			80						100 120 140										160
								Ambient Temperature, Ta -- °C																								IT00874

No.6431-2/4