Sanyo LV9005M Specifications

BiCMOS LSI

Ordering number : EN4908A

63095HA (OT)/92194TH No. 4908-1/7

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Optical Sensor Switch IC

LV9005M

Overview

The LV9005M is an optical sensor switch IC that is
fabricated in a medium breakdown voltage BiCMOS
process. The LV9005M circuit structure includes a high­gain optical sensor amplifier, a comparator, an oscillator
circuit, output drivers, LED drivers, and a synchronous
detection and delay circuit. The use of this IC and a
minimal number of external components allows the
implementations of multifunction high-sensitivity
applications that previously would have only been
possible with a custom optical-switch IC.

Applications

• Factory automation (detectors for many types of parts
and products)

• Home security (doorway and window sensors)

• Office automation equipment

Functions and Features

• Can be used with a wide range of supply voltages; from
5 to 30 V.

• Low power

• Outputs can be selected as PNP or NPN circuit types.

• Built-in high-gain amplifier

• Built-in stability and output display functions

• Supports both reflection and through type applications,
and supports both sense on light and sense on dark
applications.

• Built-in OCP and power on reset functions

• Built-in three-level comparator

• Synchronous detection scheme adopted for robust
performance in the presence of ambient and scattered
light.

• External photodiode detection scheme allows the
LV9005M to support a wide range of application areas.

• Miniature flat package supports high density printed
circuit board mounting.

Package Dimensions

unit: mm

3112-MFP24S

SANYO: MFP24S

[LV9005M]

Specifications

Absolute Maximum Ratings at Ta = 25°C

Allowable Operating Ranges at Ta = 25°C

Parameter Symbol Conditions Ratings Unit

Maximum supply voltage V

CC

max 33 V

LD pin voltage V

LD

33 V
Allowable power dissipation Pd max 425 mW
Operating temperature Topr –20 to +85 °C
Storage temperature Tstg –40 to +125 °C

Parameter Symbol Conditions Ratings Unit

Supply voltage V

CC

4.5 to 30 V

LD pin voltage V

LD

High breakdown voltage input pins VCCto 0 V

Electrical Characteristics at Ta = 25°C, VCC= 12 V (unless otherwise specified)

Note: * Current drain test circuit

No. 4908-2/7

LV9005M

Parameter Symbol Conditions min typ max Unit

Preamplifier gain V

G1

With a 20 kΩ input series resistance,

15 18 21 dB

f = 200 kHz (sine wave)

Main amplifier gain V

G2

f = 200 kHz (sine wave) 45 48 51 dB

Regulated power supply V

REGVCC

= 5 V, 5 mA DC load 3.72 4.0 4.28 V

Current drain I

CC

Measured in the specified circuit* 3.0 4.5 mA

Input resistance Z

IN

8.5 10 11.5 kΩ
[LED Output Block]
Pulse level V

LEH

With a 1 kΩ external resistor 2.9 3.2 3.6 V

Pulse period T

LE

C

OSC

= 4700 pF 300 380 460 µs

Pulse width T

PW

50% 4.2 5.2 6.2 µs

[Overcurrent Detection Voltage]
PNP output (source) OCP (P) External transistor = PNP V

CC

– 1.1 VCC– 1.35 VCC– 1.6 V
NPN output (sink) OCP (N) External transistor = NPN 1.10 1.35 1.75 V
Comparator detection level (low) COMP

L

0.33 0.44 0.55 V

Comparator detection level

COMP

M

0.60 0.74 0.88 V

(middle)
Comparator detection level (high) COMP

H

1.03 1.16 1.30 V

LG current I

LG

2.05 2.65 3.25 mA

LR current I

LR

1.12 1.72 2.32 mA

PNP drive current (source) I

SRC

1.80 2.85 3.80 mA

NPN drive current (sink) I

SNK

1.90 2.95 3.90 mA

Main amplifier output DC voltage V

OUT2

1.20 1.40 1.56 V

RT input high voltage V

IH

1 4.0 V

RT input low voltage V

IL

1 1.0 V

LD input high voltage V

IH

2 High breakdown voltage input pins 4.0 V

LD input low voltage V

IL

2 High breakdown voltage input pins 1.3 V

P/N input high voltage V

PNH3

4.0 V

P/N input low voltage V

PNL3

1.0 V

Design Specifications

Functional Description

No. 4908-3/7

LV9005M

Parameter Symbol Conditions Ratings Unit

Synchronization pull-in range PIR T

EL

= LED pulse period, transmission mode 0.55 TLEto 1.45 T

LE

µs

Power on reset T

POR

13.5 ms

Response time T

D

Oscillator external capacitor C

OCP

= 4700 pF 2 T

LE

µs

Oscillator period T

OSC

Oscillator external capacitor C

OCP

= 4700 pF 380 µs

Hysteresis V

H

0.7 Vp-p

[OCP Pulse]
Pulse period T

OCP (N)

7.0 ms

Pulse width T

OCPW (N)

C

OCP

= 22000 pF

55 µs

Pulse period T

OCP (P)

7.0 ms

Pulse width T

OCPW (P)

55 µs

+0.2
–0.15

Item Symbol Description

R/T SW R/T Reflection/through switching. *: A separate illumination oscillator is used in transmission mode.

Reflect R Input voltage = high (V

REG

) or open

Through T Input voltage = low (GND)

L/D SW L/D Light/dark switching

Light L Input voltage = high (V

CC

) or open

Dark D Input voltage = low (GND)

P/N SW P/N Output PNP/NPN switching

PNP mode PNP Input voltage = high (V

REG

) or open

NPN mode NPN Input voltage = low (GND)

Output protection Built-in overcurrent (load short) protection circuit

Comparator and display ranges

Output type NPN, PNP, two outputs

Mode relationship

Light on mode

→ Light detected: output on, dark detected: output off

Dark on mode → Light detected: output off, dark detected: output on