Overview
The LV2700V provides the reception and transmission
functions necessary for half-duplex communication in
spread-spectrum communications systems.
Features
• Frequency conversion is not required.
(direct signal processing at 236 MHz)
• Wide spread-spectrum bandwidth (20 MHz)
• Sanyo developed system for PN code synchronization
• Allows direct primary modulation (FSK and FM) by
data and analog signals. (Maximum data rate: 150 kbps)
• Low-voltage operation (2.7 to 5.5 V)
• Low power dissipation (36 mW in RX mode)
Functions
[TX Block]
• Spectrum spreader
• Crystal oscillator circuit
• PN code generator (M sequence)
• M sequence code length (31 or 63 chips) and tap
switching
• 9.83 MHz PLL
• Band limiting filter (LPF) for data transmission
[RX Block]
• Spectrum despreader
• Synchronization supplementation and protection
• 236-MHz PLL
• PN code generator (M sequence)
• M sequence code length (31 or 63 chips) and tap
switching
• FSK (FM) demodulator
• Lock detector
Package Dimensions
Bi-CMOS LSI
Ordering number : EN *5651
63097HA(OT) No. 5651-1/9
Preliminary
SANYO: SSOP30
[LV2700V]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
Spread Spectrum Communications IC
LV2700V
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
CC
max 6V
Allowable power dissipation Pd max 150 mW
Operating temperature Topr –20 to +75 °C
Storage temperature Tstg –40 to +125 °C
Specifications
Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Recommended supply voltage V
CC
3V
Allowable voltage range V
CC
op 2.7 to 5.5 V
Operating Conditions at Ta = 25°C
No. 5651-2/9
LV2700V
Parameter Symbol Conditions
Ratings
Unit
min typ max
Quiescent current
I
CCO
TX TXVCC+ V
DD
8 11 mA
I
CCO
RX RFVCC+ RXVCC+ V
DD
12 16 mA
[TX Block]
Modulated signal voltage V
O
TX TXDATAOUT, f = 10 kHz 0.2 Vp-p
RF output voltage V
O
TX TXREOUT –35 dBm
Spread bandwidth WS TXRFOUT 19.7 MHz
[RX Block]
Input sensitivity V
S
RX RFIN –75 dBm
Demodulated output 1
High level V
O
RX1H RXOUT 2.5 V
Low level V
O
RX1L RXOUT 0.4 V
Demodulated output 1 V
O
RX2 Pin 10 output w/o CEXT 240 300 mVrms
Total harmonic distortion THD RX Pin 10 output w/o CEXT 0.5 2 %
Signal-to-noise ratio S/N Pin 10 output w/o CEXT 45 55 dB
[CMOS-Level Interface]
Input high-level voltage V
I
H Pins 11 to 15, 17 2.1 V
Input low-level voltage V
I
L Pins 11 to 15, 17 0.6 V
Output high-level voltage V
O
H Pins 8, 9 2.5 V
Output low-level voltage V
O
L Pins 8, 9 0.4 V
Input high-level current I
I
H Pins 11 to 15, 17 5 µA
Input low-level current IIL Pins 11 to 15, 17 5 µA
Input amplitude V
IN
VCOIN –16 dBm
Crystal oscillator frequency conditions X
OSC
XIN, XOUT 5 13 MHz
Input capacitance C
IN
RFIN, XIN, VCOIN 2.5 pF
Electrical Characteristics at Ta = 25°C, VCC= 3 V, fc = 236 MHz, fm = 10 kHz, Vm = 0.2 Vp-p