SANYO LC7874E Datasheet
CMOS LSI
Ordering number : EN5521
13097HA(OT) No. 5521-1/22
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
CD Graphics Decorder
LC7874E
Overview
The LC7874E is a CMOS LSI that provides the signal
processing needed for compact disc graphics (CD-G) on a
single chip. The LC7874E accepts subcode R to W
signals output from a CD player DSP LC786X Series,
LC7862XE Series, or LC7863XE Series device, and
performs de-interleaving, error detection and correction,
graphic instruction processing, and image processing.
Features
• A CD-G decoder can be configured using a three-chip
combination of this LSI—the LC7874E—with external
RAM (64K × 4 bits) and an LC78010E digital RGB
encoder.
• Performs insertion and protection of CD subcode R to
W sync signals and detection of R to W signal deinterleave error signals.
• Has two crystal oscillators, for NTSC and PAL, with
simple switchover by means of a control pin.
Connecting a crystal resonator of 14.31818 MHz for
NTSC and 17.734476 MHz for PAL enables the
standard clock and other necessary timings to be
generated internally.
• Performs CD graphics instruction processing and
drawing functions, and controls image display.
• Has microcomputer interface functions, allowing set
upgrading.
• Provides superimposition support.
• Has a color bar signal output function.
• DRAM interface and RGB output and sync signal output
are 3-state outputs.
Package Dimensions
unit: mm
3159-QFP64E
SANYO: QIP64E
[LC7874E]
• CCB is a trademark of SANYO ELECTRIC CO., LTD.
• CCB is SANYO’s original bus format and all the bus
addresses are controlled by SANYO.
Parameter Symbol Conditions Ratings Unit
Power supply voltage V
DD
V
DD
V
SS
– 0.3 to V
SS
+ 7.0 V
S1, S2, SFSY, PW, SBSY, CE, DI, CL, MUTE, DB0 to 3,
Input voltage V
IN
CB, CE1, CE2, CE3, LINE, HRESET, VRESET, INIT, V
SS
– 0.3 to V
DD
+ 0.3 V
RESET, N/P, SON, XIN1, XIN2
SBCK, DO, CDGM, WE, RAS, A0 to 7, DB0 to 3, CAS, OE,
Output voltage V
OUT
ROUT0 to 3, GOUT0 to 3, BOUT0 to 3, HSYNC, CSYNC, V
SS
– 0.3 to V
DD
+0 .3 V
BLANK, YS, 4FSCO, EFLG, FSCO, XOUT1, XOUT2
Allowable power dissipation Pd max Ta = 25°C 500 mW
Operating temperature Topr –30 to +85 °C
Storage temperature Tstg –40 to +125 °C
Specifications
Electrical Characteristics at Ta = –30°C to +85°C
No. 5521-2/22
LC7874E
Parameter Symbol Conditions
Ratings
Unit
min typ max
Power supply voltage V
DDVDD
3.0 5.0 5.5 V
V
IH
1 S1, S2, CB LINE, N/P, SON 0.7 V
DD
V
DD
+ 0.3 V
V
IH
2 INIT, RESET 0.8 V
DD
V
DD
+ 0.3 V
Input high-level voltage V
IH
3 CL 0.8 V
DD
5.8 V
V
IH
4 DB0 to DB3, HRESET, VRESET 2.2 V
DD
+ 0.3 V
V
IH
5 SFSY, PW, SBSY, CE, DI, MUTE, CE1 to CE3 2.2 5.8 V
V
IL
1 S1, S2, CB, LINE, N/P, SON V
SS
– 0.3 0.3V
DD
V
Input low-level voltage
V
IL
2 CL, INIT, RESET V
SS
– 0.3 0.2V
DD
V
V
IL
3
SFSY, PW, SBSY, CE, DI, MUTE, DB0 to DB3,
V
SS
– 0.3 0.8 V
CE1 to CE3, HRESET, VRESET
Input frequency
F
SCIN
1 XIN1 14.31818 MHz
F
SCIN
2 XIN2 17.734476 MHz
Input amplitude V
IN
XIN1, XIN2 0.5 V
DD
Vp-p
Allowable Operating Ranges at Ta = –30°C to +85°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
S1, S2, SFSY, PW, SBSY, CE, DI, CL, MUTE,
Input high-level current
I
IH
1 DB0 to DB3, LINE, HRESET, VRESET, CE1 to 3, 5 µA
INIT, RESET, N/P, SON : V
IN
= V
DD
IIH2 CB : VIN= V
DD
30 100 200 µA
S1, S2, SFSY, PW, SBSY, CE, DI, CL, MUTE,
Input low-level current I
IL
1 DB0 to DB3, CB, LINE, HRESET, VRESET, –5 µA
CE1 to 3, INIT, RESET, N/P, SON : V
IN
= V
SS
SBCK, WE, RAS, A0 to 7, CAS, OE, DB0 to 3,
Output high-level voltage V
OH
CDGM, ROUT0 to 3, GOUT0 to 3, BOUT0 to 3,
V
DD
– 1 V
DD
V
FSCO, 4FSCO, HSYNC, YS, CSYNC,
BLANK, EFLG : I
OH
= –0.5 mA
SBCK, WE, RAS, A0 to 7, CAS, OE, DB0 to 3,
Output low-level voltage V
OL
CDGM, ROUT0 to 3, GOUT0 to 3, BOUT0 to 3,
V
SS
0.4 V
FSCO, 4FSCO, HSYNC, YS, CSYNC,
BLANK, EFLG : I
OL
= 2.0 mA
A0 to A7, RAS, CAS, OE, WE, DB0 to DB3,
Output off leakage current I
OFF
HSYNC, ROUT0 to 3, GOUT0 to 3, BOUT0 to 3, –5 +5 µA
CSYNC, BLANK, FSCO, 4FSCO
Built-in feedback resistance R
X
XIN1, XIN2 1 MΩ
Clock frequency f
O
SBCK 220 kHz
Operating current drain I
DD
V
DD
26 40 mA
Electrical Characteristics at Ta = –30 to +85°C, VDD= 5 V unless otherwise specified
No. 5521-3/22
LC7874E
Parameter Symbol Conditions
Ratings
Unit
min typ max
Input minimum pulse width
t
WH
CL, high pulse width 400 ns
t
WL
CL, low pulse width 400 ns
Data setup time t
DS
DI, CL 200 ns
Data hold time t
DH
DI, CL 200 ns
Data hold time t
DOH
DO, CL 130 300 ns
CE wait time t
CP
CE, CL 400 ns
CE setup time t
CS
CE, CL 400 ns
CE hold time t
CH
CE, CL 400 ns
Timing Characteristics (Microcontroller Interface Timing) at Ta = 25°C, VDD= 5 V
No. 5521-4/22
LC7874E
Parameter Symbol Conditions
Ratings
Unit
min typ max
Random read/write cycle time t
RC
250 ns
Page mode cycle time t
PC
130 ns
RAS precharge time t
RP
100 ns
RAS pulse width t
RAS
120 ns
RAS pulse width (page mode) t
RASP
18000 ns
RAS hold time t
RSH
60 ns
CAS hold time t
CSH
120 ns
CAS pulse width t
CAS
60 ns
CAS precharge time t
CPN
50 ns
CAS precharge time t
CP
(In page mode) 50 ns
Row address setup time t
ASR
100 ns
Row address hold time t
RAH
50 ns
Column address setup time t
ASC
0 ns
Column address hold time t
CAH
50 ns
Read command setup time t
RCS
150 ns
Read command hold time t
RCH
(Referenced to CAS ) 120 ns
Read command hold time t
RRH
(Referenced toRAS) 120 ns
Write command setup time t
WCS
100 ns
Write command hold time t
WCH
50 ns
Write command pulse width t
WP
150 ns
Write data setup time t
DS
100 ns
Write data hold time t
DH
100 ns
CAS setup time t
CSR
(CAS before RAS) 50 ns
CAS hold time t
CHR
(CAS before RAS) 50 ns
RAS precharge CAS active time t
RPC
50 ns
Read data setup time t
RDS
20 ns
Read data hold time t
RDH
10 ns
Refresh time t
REF
3.5 ms
Timing Characteristics (DRAM Access Timing) at Ta = 25°C, VDD= 5 V
No. 5521-5/22
LC7874E
DRAM Read Cycle
No. 5521-6/22
LC7874E
DRAM Early Write Cycle
No. 5521-7/22
LC7874E
DRAM Page Mode Read Cycle
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