No. 6015-4/31
LC78622NE
Allowable Operating Ranges at Ta = 25°C, VSS= 0 V
Parameter Symbol Conditions min typ max Unit
V
DD
(1)
V
DD
, XVDD, LVDD, RVDD, VVDD:
3.6 5.5 V
During normal-speed playback
Supply voltage
V
DD
(2)
V
DD
, XVDD, LVDD, RVDD, VVDD:
3.6 5.5 V
During double-speed playback
V
IH
(1)
DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK,
Input high level voltage
TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL
0.7 V
DD
V
DD
V
V
IH
(2) EFMIN 0.6 V
DD
V
DD
V
V
IL
(1)
DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK,
Input low level voltage
TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL
0 0.3 V
DD
V
VIL(2) EFMIN 0 0.4 V
DD
V
Data setup time t
SU
COIN, RWC: Figure 1 400 ns
Data hold time t
HD
COIN, RWC: Figure 1 400 ns
High level clock pulse width t
WH
SBCK, CQCK: Figures 1, 2 and 3 400 ns
Low level clock pulse width t
WL
SBCK, CQCK: Figures 1, 2 and 3 400 ns
Data read access time t
RAC
SQOUT, PW: Figures 2 and 3 0 400 ns
Command transfer time t
RWC
RWC: Figure 1 1000 ns
Subcode Q read enable time t
SQE
WRQ: Figure 2, with no RWC signal 11.2 ms
Subcode read cycle time t
SC
SFSY: Figure 3 136 µs
Subcode read enable time t
SE
SFSY: Figure 3 400 ns
Port input data setup time t
CSU
CONT1 to CONT5, RWC: Figure 4 400 ns
Port input data hold time t
CHD
CONT1 to CONT5, RWC: Figure 4 400 ns
Port input clock setup time t
RCQ
RWC, CQCK: Figure 4 100 ns
Port output data delay time t
CDD
CONT1 to CONT8, RWC: Figure 5 1200 ns
Input level
V
IN
(1) EFMIN: Slice level control 1.0 Vp-p
V
IN
(2) XIN: Capacitor-coupled input 1.0 Vp-p
Operating frequency range fop EFMIN 10 MHz
Crystal oscillator frequency f
X
XIN, X
OUT
16.9344 MHz
Electrical Characteristics at Ta = 25°C, VDD= 5 V, VSS= 0 V
Parameter Symbol Conditions min typ max Unit
Current drain I
DD
VDD, XVDD, LVDD, RVDD, VV
DD
25 35 mA
DEFI, EFMIN, COIN, RES, HFL, TES, SBCK,
Input high level current
I
IH
(1)
RWC, CQCK: TEST1: V
IN
= V
DD
5 µA
I
IH
(2) TAI, TEST2 to TEST5, CS, PCCL: VIN= VDD= 5.5 V 25 75 µA
DEFI, EFMIN, COIN, RES, HFL, TES, SBCK, RWC,
Input low level current I
IL
CQCK: TAI, TEST1 to TEST5, CS, PCCL: VIN= 0 V
–5 µA
EFMO, CLV
+
, CLV–, V/P, PCK, FSEQ, TOFF,
V
OH
(1)
TGL, JP
+
, JP–, EMPH/CONT6, EFLG, FSX: IOH= –1 mA
4 V
MUTEL/CONT7, MUTER/CONT8, C2F, SBSY, PW,
Output high level voltage
V
OH
(2) SFSY, WRQ, SQOUT, TST11, 16M, 4.2M, CONT1 to 4 V
CONT5: I
OH
= –0.5 mA
V
OH
(3) DOUT: IOH= –12 mA 4.5 V
EFMO, CLV
+
, CLV–, V/P, PCK, FSEQ,
V
OL
(1) TOFF, TGL, JP+, JP–, EMPH/CONT6, EFLG, FSX: 1 V
I
OH
= 1 mA
Output low level voltage
MUTEL/CONT7, MUTER/CONT8,
V
OL
(2)
C2F, SBSY, PW, SFSY, WRQ, SQOUT,
0.4 V
TST11, 16M, 4.2M, CONT1 to CONT5:
I
OH
= 2 mA
V
OL
(3) DOUT: IOH= 12 mA 0.5 V
I
OFF
(1)
PDO, CLV
+
, CLV–, JP+, JP–, CONT1 to CONT5:
5 µA
V
OUT
= V
DD
Output off leakage current
I
OFF
(2)
PDO, CLV
+
, CLV–, JP+, JP–, CONT1 to CONT5:
–5 µA
V
OUT
= 0 V
Charge pump output current
I
PDOH
PDO: R
ISET
= 68 kΩ 64 80 96 µA
I
PDOL
PDO: R
ISET
= 68 kΩ –96 –80 –64 µA