Electrical Characteristics for the Allowable Operating Ranges
No. 5066-3/25
LC75854E, 75854W
Parameter Symbol Conditions
Ratings
Unit
min typ max
Hysteresis V
H
CE, CL, DI 0.1 V
DD
V
Power-down detection voltage V
DET
2.7 3.0 3.3 V
Input high level current I
IH
CE, CL, DI: VI= 6.0 V 5.0 µA
Input low level current I
IL
CE, CL, DI: VI= 0 V –5.0 µA
Input floating voltage V
IF
KI1 to KI5 0.05 V
DD
V
Pull-down resistance R
PD
KI1 to KI5: VDD= 5.0 V 50 100 250 kΩ
Output off leakage current I
OFFH
DO: VO= 6.0 V 6.0 µA
V
OH
1 KS1 to KS6: IO= –500 µA VDD– 1.2 VDD– 0.5 VDD– 0.2 V
Output high level voltage
V
OH
2 P1 to P4: IO= –1 mA VDD– 1.0 V
V
OH
3 S1 to S41: IO= –20 µA VDD– 1.0 V
V
OH
4 COM1 to COM4: IO= –100 µA VDD– 1.0 V
V
OL
1 KS1 to KS6: IO= 25 µA 0.2 0.5 1.5 V
V
OL
2 P1 to P4: IO= 1 mA 1.0 V
Output low level voltage V
OL
3 S1 to S41: IO= 20 µA 1.0 V
V
OL
4 COM1 to COM4: IO= 100 µA 1.0 V
V
OL
5 DO: IO= 1 mA 0.1 0.5 V
V
MID
1 COM1 to COM4: 1/2 bias, IO= ±100 µA
1/2 V
DD
– 1/2 VDD+
V
1.0 1.0
V
MID
2 S1 to S41: 1/3 bias, IO= ±20 µA
2/3 V
DD
– 2/3 VDD+
V
1.0 1.0
Output middle level voltage
*2
V
MID
3 S1 to S41: 1/3 bias, IO= ±20 µA
1/3 V
DD
– 1/3 VDD+
V
1.0 1.0
V
MID
4 COM1 to COM4: 1/3 bias, IO= ±100 µA
2/3 V
DD
– 2/3 VDD+
V
1.0 1.0
V
MID
5 COM1 to COM4: 1/3 bias, IO= ±100 µA
1/3 V
DD
– 1/3 VDD+
V
1.0 1.0
Oscillator frequency f
OSC
OSC: R = 62 kΩ, C = 680 pF 40 50 60 kHz
I
DD
1 Sleep mode 100 µA
Current drain I
DD
2VDD= 6.0 V, output open, 1/2 bias, f
OSC
= 50 kHz 250 500 µA
I
DD
3VDD= 6.0 V, output open, 1/3 bias, f
OSC
= 50 kHz 200 400 µA
Note: *2. Excluding the bias voltage generation divider resistor built into VDD1 and VDD2. (See Figure 1.)
Figure 1
To the common segment driver
Excluding these resistors.