No. 5782-2/11
LC4608C
Parameter Symbol Conditions
Ratings
Unit
min typ max
STBCLK frequency f
STB
1.0 MHz
CLK → LOAD setup time t
SL
80 ns
LOAD → CLK hold time t
HL
80 ns
LOAD pulse width t
WL
80 ns
STBCLK → LOAD setup time t
STBL
80 ns
LOAD → STBCLK hold time t
LSTB
80 ns
Clock rising edge time t
r
35 ns
Clock falling edge time t
f
35 ns
Latch rising edge time t
lr
70 ns
Latch falling edge time t
lf
70 ns
Operating temperature Tjopr –1.0 +90 °C
Continued from preceding page.
Note : 1. The figures for normal operation are a load capacitance Cpzt of 1 nF, a power supply voltage VHof 30 V, and a max input level COMmax of 25 V.
2. Value for V
H
= 40 V, COMmax = 40 V, frequency = 35 kHz, and duty factor = 1/100.
Note : 1. The sign is negative for incoming current and positive for outgoing current.
2. –I
IH
1 applies to the following input pins: SI0 to SI3, CLK, LAT, LOAD, STBCLK, and STB1 to STB3. –IIHapplies to the following input pins: STB4
and STB5.
3. I
IL
1 applies to the following input pins: SI0 to SI3, CLK, LAT, LOAD, STBCLK, and STB1 to STB5.
Note : 5. The figures are for a load capacitance Cpzt of 1 nF and a power supply voltage V
H
of 30 V as measured with RL= 3 kΩ and COMn = 25 V DC.
Parameter Symbol Conditions
Ratings
Unit
min typ max
Input high-level voltage V
IH
VDD× 0.7 VDD+0.3 V
Input low-level voltage V
IL
–0.3 VDD× 0.3 V
Input high-level current *2
–I
IH
1 VDD= 5.0 V, VIH= 5.0 V 0 0.5 µA
–I
IH
2 VDD= 5.0 V, VIH= 5.0 V 0 50 100 µA
Input low-level current *3 I
IL
VDD= 5.0 V 0 0.5 µA
Output high- level voltage V
OHIO
= –400 µA VDD– 0.5 V
Output low-level voltage V
OLIO
= 400 µA 0.5 V
Output high-level current transmission gate
V
OHT
VDD= 5.0 V, VH= 40 V, COMn = 40 V,
39 39.4 V
voltage I
OHT
= 10 mA
Output low-level current transmission gate
V
OLT
VDD= 5.0 V, VH= 40 V, COMn = 40 V,
0.6 1.0 V
voltage –I
OHT
= 10 mA
Transmission gate on resistance R
ONVH
= 40 V, VDS= 3 V 60 100 Ω
Within chip
Transmission gate on resistance variation Rx –15 +15 Ω
Current drain I
DD
1 VDD– GND, fclk = 3.5 MHz, f
Sln
= 1.75 MHz –15 +15 Ω
Leakage current between pins ±INL Leakage current between pins 0 10 µA
Output leakage current I
LEAKVDD
= 5.0 V, VH= 42 V 0 100 µA
Electrical Characteristics
DC Characteristics at VDD= 5.0 V±10%, Tjopr = –10 to +90°C unless otherwise specified
2 (MAX – MIN) × 100
——————————
MAX + MIN
Parameter Symbol Conditions
Ratings
Unit
min typ max
SOn output rising edge time t
or
CL= 10 pF 50 ns
SOn input rising edge time t
of
CL= 10 pF 50 ns
STBn → DOn propagation delay time
t
dor
*5 1.0 µs
t
dof
*5 1.0 µs
CLK → SOn propagation delay time
t
sor
CL= 10 pF 140 ns
t
sof
CL= 10 pF 140 ns
Switching Characteristics at VDD= 5.0 V±10%, Tjopr = –10 to +90°C unless otherwise specified