Sanyo LA5615M Specifications

Sanyo LA5615M Specifications

Ordering number :ENN5285

Monolithic linear IC

LA5615M

Lead Battery Charger IC with Battery Voltage Detection Function

Overview

The LA5615M is an IC that integrates a battery voltage detection and lead battery charger on a single chip that supports compact sets.

Functions and Features

Charge voltage can be switched between cycle charge and trickle charge (4.9 V typ. 4.6 V typ.).

Charge current limit can be set with an external resistor (125 mA typ.).

Built-in charge current detection circuit

Built-in battery voltage detection circuit

Specifications

Maximum Rating at Ta = 25°C

Package Dimensions

unit: mm

3097-MFP16FS

[LA5615M]

16

9

0.625

 

 

 

 

5.4

6.35

7.6

1

8

 

1.8max

0.15

 

12.6

 

 

 

 

 

 

1.5

 

 

0.35

 

0.1

 

 

1.35

0.625

 

 

1.0

 

 

2.8

 

 

SANYO: MFP16FS

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Supply voltage

VCC max

 

15

V

Battery pin voltage

VBatt max

 

6

V

Allowable power dissipation

Pd max

 

0.7

mW

 

 

 

 

 

Operating temperature

Topr

 

–20 to +80

°C

 

 

 

 

 

Storage temperature

Tstg

 

–30 to +125

°C

 

 

 

 

 

Operating Conditions at Ta = 25°C

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Supply voltage

VCC

 

6.15 to 14.5

V

Battery pin voltage

VBatt IN

 

0 to 5.5

V

CHARGE LED sink current

ICHG-LED

 

0 to 40

mA

DET LED sink current

IDET-LED

 

0 to 40

mA

VBatt sink current

IBatt-LED

 

0 to 40

mA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22500RM (OT) No. 5285-1/7

LA5615M

Electrical Characteristics at Ta = 25°C, VCC = 9 V = VBatt IN = 4 V

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

 

 

[Charge System]

 

 

 

 

 

 

 

 

 

 

 

 

 

Charge voltage (when trickle is selected)

VO1

IO = 10 mA

4.45

4.6

4.75

V

Charge voltage (when cycle is selected)

VO2

IO = 50 mA

4.75

4.9

5.05

V

Differential voltage of VO2 and VO1

VO

VO = VO2 – VO1

0.2

0.3

0.4

V

Cycle trickle switching current

ICT

 

34

40

46

mA

Output peak current

IOP

RL = 33 Ω

112.5

125

137.5

mA

Line regulation (when trickle is selected)

VOLN1

VCC = 8 to 14.5 V, IO = 10 mA

 

50

100

mV

Line regulation (when cycle is selected)

VOLN2

VCC = 8 to 14.5 V, IO = 50 mA

 

100

150

mV

Load regulation (when trickle is selected)

VOLD1

IO = 0.5 to 30 mA

 

50

100

mV

Load regulation (when cycle is selected)

VOLD2

IO = 50 to 60 mA

 

100

150

mV

Current drain

IQ1

IO = 0 mA

 

6

10

mV

IQ2

IO = 50 mA

 

13

21

mA

 

 

CHARGE LED residual voltage

VCHG-LED

IIN = 40 mA

 

1.1

1.3

V

CHARGE LED leak current

ICHG-LED

VIN = 9 V

 

 

200

nA

CHARGE detection current

ICHARGED

 

0.8

1

1.2

mA

DET LED residual voltage

VDET

IIN = 40 mA

 

1.1

1.3

V

DET LED leak current

IDET

VIN = 9 V

 

 

200

nA

POWER DET detection voltage

VDET-IN

 

5.85

6.05

6.15

V

POWER DET hysteresis width

VDET-HYS

 

0.1

0.2

0.3

V

[Battery Detection System]

 

 

 

 

 

 

 

 

 

 

 

 

 

Battery detection voltage

VBatt

 

3.17

3.3

3.43

V

VBAT pin residual voltage

VBAT

IIN = 40 mA

 

0.3

0.5

V

VBAT pin leak current

IBAT

VIN = 5 V

 

 

200

nA

Current drain

IOFF

VBatt = 2.5 V

 

5

6

µA

when detection circuit is OFF

 

Current drain

ION

No load

 

350

500

µA

when detection circuit is ON

 

Current drain during Battery SAVE

ISAVE

VBatt. SAVE = 4 V

 

20

30

µA

Battery B residual voltage

VBAT.B

IIN = 40 mA

 

1.1

1.3

V

[Internal transistors for reset]

 

 

 

 

 

 

 

 

 

 

 

 

 

REST residual voltage

VREST

REST.IN = 2 µA, IIN = 50 µA

 

0.3

0.5

V

REST leak current

IREST

VIN = 5 V

 

 

200

nA

[Internal transistors for reset]

 

 

 

 

 

 

Threshold voltage

VSAVE.TH.

 

1.1

1.27

1.5

V

SAVE pin input current

ISAVE..IN

VIN = 4 V

 

17

24

µA

No. 5285-2/7

LA5615M

Allowable power dissipation, Pd max — mW

Recommended board mounting

Independent IC

Operating temperature, Ta — °C

Recommended Board

Copper plating 180 mm2

Board material: Paper phenol t = 1.5 mm

Pin Assignment

No. 5285-3/7

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