Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Monolithic Linear IC
Variable Divided Voltage Generator
for LCD Use
Ordering number:ENN3245A
LA5317M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LA5317M is a variable divided voltage generator IC
for multiple drive of LCD matrix.
Package Dimensions
unit:mm
3073A-MFP30SD
[LA5317M]
Features
30
• Power supply for variable bias LCD drive (1/5 to 1/20
bias available by on-chip resistances).
• 5 operational amplifiers to deliver 5 voltage outputs.
• Low current drain (1.6mA typ).
• Miniflat package.
115
15.3
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
tnerructuptuomumixaMI
noitapissidrewopelbawollAxamdP 008Wm
erutarepmetgnitarepOrpoT 57+ot02–
erutarepmetegarotSgtsT 521+ot03–
Note 1) Continuous operation (nonbreakdown) is guaranteed when operated at the maximum ratings shown above.
Note 2)* The maximum output current is a value specified under the conditions otherwise specified separately.
EE
TUO
xamVCCV-
xamV1Vot
EE
5
16
7.9
2.25
1.0
0.65
0.1
0.25
2.5max
9.2
10.5
0.65
SANYO : MFP30SD
0ot83–V
52±*Am
˚C
˚C
Operating Conditions at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppuSV
I
tnerructuptuO
I
I
VCCV-
EE
1TUO
3,2TUO
5,4TUO
V
V2V,
V4V,
EE
1
3
5
Note 3) Set VCC, VEE so that | V1 |, | V5-V4 | become 1V or greater.
31500TN (KT)/3270YT/9279TA, TS No.3245–1/4
01–ot53–V
01+ot5.0–Am
01+ot01–Am
5.0+ot51–Am
LA5317M
Operating Characteristics at Ta = 25˚C, VCC–VEE=20V, V
retemaraPlobmySsnoitidnoC
niardtnerruCI
1oitaregatlovtuptuO1aRV2V/
2oitaregatlovtuptuO2aRV(5V-3V(/)5V-4)69.100.240.2
3oitaregatlovtuptuO1bRV5V/
4oitaregatlovtuptuO2bRV5V/
5oitaregatlovtuptuO3bRV5V(/5V-3)28.500.681.6
6oitaregatlovtuptuO4bRV5V(/5V-4)46.1100.2163.21
1oitarecnatsiserlanretnIR8
2oitarecnatsiserlanretnIR21
3oitarecnatsiserlanretnIR41
4oitarecnatsiserlanretnIR51
5oitarecnatsiserlanretnIR61
ecnatsiseRRRssorcadeilppasiV5.0nehweulavR
1noitalugerdaoL
2noitalugerdaoL
3noitalugerdaoL
2–noitalugerdaoL–∆V2V
3–noitalugerdaoL–∆V3V
4–noitalugerdaoL–∆V4V
5–noitalugerdaoL–∆V5V
CCI,EE
∆V
∆V
∆V
VCCV,
RXR-1
R
X
RXR-1
R
X
RXR-1
R
X
RXR-1
R
X
RXR-1
R
X
V
1
1
V
2
2
V
3
3
2
3
4
5
V:
EE
1
1
2
X
Rdna5
6
X
X
Rdna5
6
X
X
Rdna5
6
X
X
Rdna5
6
X
X
Rdna5
6
X
I<Am2.0–:
I<Am2.0–:
I<Am2.0–:
REF=VEE
CCV=EE
1TUO
2TUO
3TUO
I<Am0.01–:
2TUO
I<Am0.01–:
3TUO
I<Am0.01–:
4TUO
I<Am0.01–:
5TUO
, RX=8R
sgnitaR
nimpytxam
R,V02=
R8=6.13Am
X
ssorcaRotdecnereferoitarecnatsiseR,2
ssorcaRotdecnereferoitarecnatsiseR,3
ssorcaRotdecnereferoitarecnatsiseR,4
ssorcaRotdecnereferoitarecnatsiseR,5
ssorcaRotdecnereferoitarecnatsiseR,6
Rdna5
X
Am0.01+<02±Vm
Am0.01+<02±Vm
Am0.01+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm
602kΩ
X
69.100.240.2
46.1100.2163.21
28.500.681.6
8
21
41
51
61
tinU
Equivalent Circuit Block Diagram
Note : Use the IC so that V
RX1≥VRX2≥VRX3≥VRX4≥VRX5≥VRX6
is obtained.
No.3245–2/4