Sanyo LA5317M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Monolithic Linear IC

Variable Divided Voltage Generator

for LCD Use

Ordering number:ENN3245A

LA5317M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Overview

The LA5317M is a variable divided voltage generator IC
for multiple drive of LCD matrix.

Package Dimensions

unit:mm

3073A-MFP30SD

[LA5317M]

Features

30

• Power supply for variable bias LCD drive (1/5 to 1/20
bias available by on-chip resistances).

• 5 operational amplifiers to deliver 5 voltage outputs.

• Low current drain (1.6mA typ).

• Miniflat package.

115

15.3

0.4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
tnerructuptuomumixaMI

noitapissidrewopelbawollAxamdP 008Wm

erutarepmetgnitarepOrpoT 57+ot02–

erutarepmetegarotSgtsT 521+ot03–

Note 1) Continuous operation (nonbreakdown) is guaranteed when operated at the maximum ratings shown above.
Note 2)* The maximum output current is a value specified under the conditions otherwise specified separately.

EE

TUO

xamVCCV-

xamV1Vot

EE

5

16

7.9

2.25

1.0

0.65

0.1

0.25

2.5max

9.2

10.5

0.65

SANYO : MFP30SD

0ot83–V
52±*Am

˚C
˚C

Operating Conditions at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatlovylppuSV

I

tnerructuptuO

I
I

VCCV-

EE

1TUO

3,2TUO
5,4TUO

V
V2V,
V4V,

EE

1

3
5

Note 3) Set VCC, VEE so that | V1 |, | V5-V4 | become 1V or greater.

31500TN (KT)/3270YT/9279TA, TS No.3245–1/4

01–ot53–V
01+ot5.0–Am
01+ot01–Am

5.0+ot51–Am

LA5317M

Operating Characteristics at Ta = 25˚C, VCC–VEE=20V, V

retemaraPlobmySsnoitidnoC

niardtnerruCI

1oitaregatlovtuptuO1aRV2V/
2oitaregatlovtuptuO2aRV(5V-3V(/)5V-4)69.100.240.2
3oitaregatlovtuptuO1bRV5V/
4oitaregatlovtuptuO2bRV5V/
5oitaregatlovtuptuO3bRV5V(/5V-3)28.500.681.6
6oitaregatlovtuptuO4bRV5V(/5V-4)46.1100.2163.21

1oitarecnatsiserlanretnIR8

2oitarecnatsiserlanretnIR21

3oitarecnatsiserlanretnIR41

4oitarecnatsiserlanretnIR51

5oitarecnatsiserlanretnIR61

ecnatsiseRRRssorcadeilppasiV5.0nehweulavR

1noitalugerdaoL
2noitalugerdaoL
3noitalugerdaoL

2–noitalugerdaoL–∆V2V
3–noitalugerdaoL–∆V3V
4–noitalugerdaoL–∆V4V
5–noitalugerdaoL–∆V5V

CCI,EE

∆V
∆V
∆V

VCCV,

RXR-1
R

X
RXR-1
R

X
RXR-1
R

X
RXR-1
R

X
RXR-1
R

X

V

1

1
V

2

2
V

3

3

2

3

4

5

V:

EE

1

1
2

X

Rdna5

6

X

X

Rdna5

6

X

X

Rdna5

6

X

X

Rdna5

6

X

X

Rdna5

6

X

I<Am2.0–:
I<Am2.0–:
I<Am2.0–:

REF=VEE

CCV=EE

1TUO
2TUO
3TUO

I<Am0.01–:

2TUO

I<Am0.01–:

3TUO

I<Am0.01–:

4TUO

I<Am0.01–:

5TUO

, RX=8R

sgnitaR

nimpytxam

R,V02=

R8=6.13Am

X

ssorcaRotdecnereferoitarecnatsiseR,2

ssorcaRotdecnereferoitarecnatsiseR,3

ssorcaRotdecnereferoitarecnatsiseR,4

ssorcaRotdecnereferoitarecnatsiseR,5

ssorcaRotdecnereferoitarecnatsiseR,6

Rdna5

X

Am0.01+<02±Vm
Am0.01+<02±Vm
Am0.01+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm
Am2.0+<02±Vm

602kΩ

X

69.100.240.2

46.1100.2163.21

28.500.681.6

8

21

41

51

61

tinU

Equivalent Circuit Block Diagram

Note : Use the IC so that V

RX1≥VRX2≥VRX3≥VRX4≥VRX5≥VRX6

is obtained.

No.3245–2/4