Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Monolithic Linear IC
Power Amplifier for 1.5V Headphone Stereo
Ordering number:ENN2247A
LA4535M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
• Low current drain.
• 16Ω load drive capability.
• Excellent reduced voltage characteristics.
• Excellent power supply ripple rejection.
• Minimum number of external parts required (no input
Package Dimensions
unit:mm
3086A-MFP10S
[LA4535M]
10
6
capacitor, feedback capacitor required).
• Less harmonic interference in radio band.
• On-chip power switch function, muting function.
1
5
5.1
0.55
1.00.35
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
noitapissidrewopelbawollAxamdP 003Wm
erutarepmetgnitarepOrpoT 57+ot02–
erutarepmetegarotSgtsT 521+ot04–
Operating Conditions at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusdednemmoceRV
egnaregatlovgnitarepOV
ecnatsiserdaoldednemmoceRR
Operating Characteristics at Ta = 25˚C, RL=16Ω, Rg=600Ω, See specified Test Circuit.
retemaraPlobmySsnoitidnoC
1*tnerructnecseiuQ
niagegatloV
ecnereffidniagegatloV
xamtnecseiuQ 5.4V
CC
CC
po 0.4ot9.0V
CC
L
1occIV
CC
2occIVCC01nip,V5.2= → DNG5.15.2Am
3occIVCC1nip,V5.2= → DNG0.1Aµ
1GVV
2GVV
∆ 1GV
∆ 2GV
CC
CC
V
CC
V
CC
tnecseiuq,V2.1=5.30.6Am
V,zHk1=f,V2.1=
V,zHk1=f,V9.0=
V,zHk1=f,V2.1=
V,zHk1=f,V9.0=
mBd02–=5.022232Bd
O
mBd02–=5.912232Bd
O
mBd02–=0.1Bd
O
mBd02–=0.1Bd
O
4.4
0.15
1.8max
1.5˚
0.1
nimpytxam
0.625
6.4
5.15
SANYO : MFP10S
˚C
˚C
5.1V
Ω
23ot61
sgnitaR
tinU
Continued on next page.
21800TN (KT)/O147KI/9046KI, TS No.2247–1/3
LA4535M
Continued from preceding page.
retemaraPlobmySsnoitidnoC
noitrotsidcinomrahlatoTDHTV
rewoptuptuOP
klatssorCTCV
noitcejerelppiRRRVS
egatlovesiontuptuOV
tceffefforewoPV
tceffegnituMV
ytivitisnestnerrucnorewoPI
ytivitisnesegatlovfforewoPV
ytivitisnestnerrucffognituMI
ytivitisnesegatlovnognituMV
O
ON
O
O
1
1
01
01
CC
V
CC
CC
V
CC
V
CC
)ffo(V
CC
)TM(V
CC
)no(VCC5V,V58.0= ≥ V5.01.00.1Aµ
)ffo(VCC5V,V58.0= ≤ V1.05.056.0V
)ffo(V
CC
)no(V
CC
P,zHk1=f,V2.1=
Wm5.0=8.05.1%
O
%01=DHT,zHk1=f,V5.1=58Wm
k1=gR,zH001=f,V2.1= Ω V,
O
k1=gR,zH001=f,V0.1= Ω V,
zH001=FPB
k1=gR,V5.2= Ω zHk02otzH02=FPB,0344Vµ
5V,V58.0= ≥ V5.03.00.1Aµ
5V,V58.0= ≤ V1.05.056.0V
R
1nip,zH001=f,V9.0= → V,DNG
01nip,zH001=f,V9.0= → V,DNG
Bd02–=0454Bd
,mBd03–=
Bd01–=08–mBd
NI
Bd01–=08–mBd
NI
nimpytxam
Note) The quiescent current is respresented by the current flowing into pin 6. The respective maximum currents flowing
into pin 1 and pin 10 are calculated by (V pin –0.5) / 16 [V/kΩ] and the total current increases by these current
values.
Equivalent Circuit Block Diagram
sgnitaR
5405Bd
tinU
Test Circuit
No.2247–2/3