Sanyo FX901 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor
N-Channel MOS Silicon FET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN5387
FX901
Features
· Composite type with a PNP transistor and a 2.5V
drive N-channel MOSFET with a built-in low
forward-voltage Schottky barrier diode faciliteting
high-density mounting.
Package Dimensions
unit:mm
2133
[FX901]
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
noitapissiDrewoPelbawollA
noitapissiDrewoPlatoTP
erutarepmeTegarotSgtsT 051+ot55–
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
erutarepmeTnoitcnuJjT 051
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
erutarepmeTlennahChcT 051
]DBS[
tnerruCdeifitceRegarevAI
· Marking:901
P 8W
P 5.1W
T
C
PC
B
D
PD
O
Tc=25˚C, 1 unit
Mounted on ceramic board (750mm
Mounted on ceramic board (750mm
OBC
OEC
OBE
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %1
2
×0.8mm) 1 unit
2
×0.8mm)
1:Base
2:Emitter
3:Anode, Source
4:Gate
5, 6:Common
(Collector, Cathode, Drain)
SANYO:XP5
(Bottom view)
2W
˚C
51–V
11–V
7–V
3–A
5–A
006–Am
˚C
11V
01±V
2A
8A
˚C
005Am
Continued on next page.
52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5
FX901
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emitNO-nruTt
emiTegarotSt
emiTllaFt
]TEFSOM[
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseR-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emITyaleDFFO-nruTt
emiTllaFt
]DBS[
egatloVdrawroFV
emiTyrevoceResreveRt
hEF)1(VECI,V2–=
hEF)2(VECI,V2–=
R
R
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
F
F
I
rr
F
I,V21–=
BC
BE
EC
BC
SD
SG
SD
SD
SD
SD
0=1.0– Aµ
E
I,V6–=
0=1.0– Aµ
C
A5.0–=041065
C
A3–=07
C
I,V2–=
A3.0–=004zHM
C
zHM1=f,V01–=62Fp
I,A5.1–=
Am03–=22.0– 4.0– V
B
I,A5.1–=
Am03–=9.0– 2.1– V
B
I,Aµ01–=
0=51– V
E
R,Am1–=
=∞ 11– V
EB
I,Aµ01–=
0=7– V
C
V,Am1=
SG
V,V4.01=
V,V8±=
SD
I,V01=
D
D
V,A1=
V4=041002mΩ
SG
V,Am005=
Am005=4.054.0V
tiuctiCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS01sn
0=11V
0=004Aµ
SG
0=01±Aµ
Am1=5.05.1V
A1=8.18.2S
V5.2=002023mΩ
SG
zHM1=f,V01=581Fp
zHM1=f,V01=012Fp
zHM1=f,V01=04Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS53sn
sµ/A05=td/id,Am005=0203sn
sgnitaR
nimpytxam
tinU
Swithing Time T est CIrcuit
[TR]
Trr Test Circuit
[MOSFET]
No.5387-2/5
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