Sanyo FX856 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

DC/DC Converter Applications

Ordering number:ENN5372A

FX856

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· The FX856 composite device consists of following
two devices to facilitate high-density mounting. One
is a P-channel MOSFET that features low ON
resistance, high-speed switching, and low driving
voltage. The other is a shottky barrier diode that
features short reverse recovery time and low forward
voltage.

· Each device incorporated in the FX856 is equivalent
to the 2SJ416 and to the SB07-03P, respectively.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

]TEFSOM[

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

]DBS[

egatloVesreveRkaePevititepeRV

egatloVegruSesreveRkaePevititeper-noNV

tnerruCdeifitceRegarevAI

tnerruCdrawroFegruSI

erutarepmeTnoitcnuJjT 521+ot55–

erutarepmeTegarotSgtsT 521+ot55–

Marking : 863

SSD
SSG

D

PD

Mounted on a ceramic board (750mm2×0.8mm)

D

Tc=25°C

MRR
MSR

O

MSF

Package Dimensions

unit:mm

2119

[FX856]

5.0

1.5

0.5

2.4

4.2

4

0.4

0.8

%1elcycytud,sµ01WP 8–A

elcyc1,evaweniszH05 5A

1.5

56

32

0.8

2.4

2.4

6.2

1.2D 0.15max

0.7

5.9

1.0

1

0.4

1.8

1 : Gate
2 : Source
3 : No Contact
4 : Anode
5 : Cathode
6 : Drain
(Bottom view)
SANYO : XP6

03–V
02±V

2–A

5.1W
6W

˚C
˚C

03V
53V
007Am

˚C
˚C

92500TS (KOTO) TA-2770 No.5372–1/5

FX856

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

]TEFSOM[

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

]DBS[

egatloVesreveRV
egatloVdrawroFV

tnerruCesreveRI

ecnaticapaClanimretretnICV

emiTyrevoceResreveRt

ecnatsiseRlamrehTa-jhtR 001

d

d

I

SSD)RB(

D

V

SSD

V

SSG

)ffo(VSDI,V01–=

SG

1)no(IDV,A1–=

SD

2)no(IDV,A1–=

SD

)no(tiucriCtseTdeificepseeS01sn

r

)ffo(tiucriCtseTdeificepseeS011sn

f

I

DS

S

I

R

R

I

F

F

VRV51= 08Aµ

R

IFI=

rr

Mounted on a ceramic board (750mm

V,Am1–=

0=03– V

SG

V,V03–=

SD
SG

SD
SD
SD

V,A2–=

Aµ003=03V

Am007= 55.0V

R

R

0=001– Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1– 5.2– V

D

A1–=2.10.2S

D

V01–=013044mΩ

SG

V4–=084056mΩ

SG

zHM1=f,V01–=071Fp
zHM1=f,V01–=021Fp
zHM1=f,V01–=03Fp

tiucriCtseTdeificepseeS02sn

tiucriCtseTdeificepseeS57sn

0=0.1– 2.1– V

SG

elcyczHM1=f,V01=62Fp

sgnitaR

nimpytxam

tiucriCtseTdeificepseeS,Am001= 01sn

2

×0.8mm)

tinU

˚C/W

Electrical Connection

65

1 : Gate
2 : Source
3 : No Contact
4 : Anode

123

4

5 : Cathode
6 : Drain

Switching Time Test Circuit Trr Test Circuit

[MOSFET] [SBD]

VDD= --15V

Duty≤10%

10µs

50Ω 100Ω 10Ω

0V

--10V

PW=10µs
D.C.≤1%

P.G

V

IN

V

IN

G

50Ω

D

ID= --1A
RL=15Ω

V

FX856

S

OUT

VR

--5V

100mA100mA

10mA

t

rr

No.5372–2/5