Sanyo FX853 Specifications

Ordering number:EN4893

FX853

MOSFET:N-Channel Silicon MOSFET

SBD:Schottky Barrier Diode

DC-DC Converter Applications

Features

·Composite type composed of a low ON-resistance N- channel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting.

·The FX853 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB05-05P, placed in one package.

Electrical Connection

1:Gate

2:Source

3:No connection 4:Anode 5:Cathode 6:Drain

(Top view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2119

[FX853]

1:Gate

2:Source

3:No connection 4:Anode 5:Cathode 6:Drain

SANYO:XP6 (Bottom view)

Parameter	Symbol	Conditions	Ratings	Unit
[MOSFET]
Drain-to-Source Voltage	VDSS		30	V
Gate-to-Source Voltage	VGSS		±15	V
Drain Current (DC)	ID		2	A
Drain Current (Pulse)	IDP	PW≤10µs, duty cycle≤1%	8	A
Allowable Power Dissipation	PD	Tc=25˚C	6	W
	PD	Mounted on ceramic board (750mm2×0.8mm)	1.5	W
Channel Temperature	Tch		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C
[SBD]
Repetitive Peak Reverse Voltage	VRRM		50	V
Non-repetitive Peak Reverse Surge Voltage	VRSM		55	V
Average Rectified Current	IO		500	mA
Surge Forward Current	IFSM	50Hz sine wave, 1 cycle	5	A
Junction Temperature	Tj		–55 to +125	˚C
Storage Temperature	Tstg		–55 to +150	˚C
· Marking:853			Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/71095TS (KOTO) TA-0118 No.4893-1/4

FX853

Continued from preceding page.

Electrical Characteristics at Ta = 25˚C

Parameter		Symbol		Conditions			Ratings		Unit
						min	typ	max
[MOSFET]
D-S Breakdown Voltage	V(BR)DSS		ID=1mA, VGS=0			30			V
Zero-Gate Voltage Drain Current		IDSS	VDS=30V, VGS=0					100	µA
Gate-to-Source Leakage Current		IGSS	VGS=±12V, VDS=0					±10	µA
Cutoff Voltage		VGS(off)	VDS=10V, ID=1mA			1.0		2.0	V
Forward Transfer Admittance		| Yfs |	VDS=10V, ID=1A			1.2	2.0		S
Static Drain-to-Source ON-State Resistance		RDS(on)	ID=1A, VGS=10V				0.18	0.25	Ω
		RDS(on)	ID=1A, VGS=4V				0.25	0.38	Ω
Input Capacitance		Ciss	VDS=10V, f=1MHz				170		pF
Output Capacitance		Coss	VDS=10V, f=1MHz				100		pF
Reverse Transfer Capacitance		Crss	VDS=10V, f=1MHz				30		pF
Turn-ON Delay Time		td(on)	See specified Test Circuit				7		ns
Rise Time		tr	See specified Test Circuit				11		ns
Turn-OFF Delay Time		td(off)	See specified Test Circuit				35		ns
Fall Time		tf	See specified Test Circuit				25		ns
Diode Forward Voltage		VSD	IS=2A, VGS=0				1.0		V
[SBD]
Reverse Voltage		VR	IR=200µA			50			V
Forward Voltage		VF	IF=500mA					0.55	V
Reverse Current		IR	VR=25V					50	µA
Interterminal Capacitance		C	VR=10V, f=1MHz Cycle				18		pF
Reverse Recovery Time		trr	IF=IR=100mA, See specified Test CIrcuit					10	ns
Thermal Resistance		Rthj-a	Mounted on ceramic board (750mm2×0.8mm)				100		˚C/W
Switching Time Test CIrcuit		[MOSFET]		Trr Test Circuit	[SBD]

No.4893-2/4