SANYO FX852 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4892
FX852
Features
· Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX852 is formed with 2 chips, one being
equivalent to the 2SK1467 and the other the SB0703P, placed in one package.
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 051+ot55–
· Marking:852
(Top view)
SSD
SSG
D
P
P
egatloVegruSesreveRkaePevititeper-noNV
O
WP ≤ elcycytud,sµ01 ≤ %18A
PD
Tc=25˚C
D
Mounted on ceramic board (750mm
D
MRR
MSR
MSF
Package Dimensions
unit:mm
2119
[FX852]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
2
×0.8mm)
elcyc1,evaweniszH05 5A
Continued on next page.
03V
51±V
2A
6W
5.1W
˚C
˚C
03V
53V
007Am
˚C
˚C
52098HA (KT)/71095MO (KOTO) TA-0117 No.4892-1/4
FX852
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveR
ecnatsiseRlamrehT
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
R
F
R
rrtIFI=
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
I
R
I
F
VRV51= 08Aµ
R
R
Mounted on ceramic board (750mm
a-jhtR 001
0=03V
SG
V,V03=
0=001Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01=
Am1=0.10.2V
D
A1=2.10.2S
D
V,A1=
V01=81.052.0
SG
V,A1=
V4=52.083.0
SG
zHM1=f,V01=071Fp
zHM1=f,V01=001Fp
zHM1=f,V01=03Fp
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS11sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS52sn
V,A2=
0=0.1V
SG
Aµ003=03V
Am007= 55.0V
elcyCzHM1=f,V01=62Fp
sgnitaR
nimpytxam
tiucrICtseTdeificepseeS,Am001= 01sn
2
×0.8mm)
tinU
Ω
Ω
˚C/W
Switching Time T est CIrcuit [MOSFET] T rr Test Circuit [SBD]
No.4892-2/4
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