Sanyo FX607 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching,
Motor Driver Applications
Ordering number:EN4890
Features
· Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX607 is formed with two chips, each being equivalent to the 2SK2260, placed in one package.
· Matched pair characteristics.
Switching Time Test CIrcuit
Package Dimensions
unit:mm
2120
[FX607]
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
SANYO:XP6 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
· Marking:607
D
PD
P
D
P
D T
(Top view)
SSD SSG
WP elcycytud,sµ01 %18.4A
Tc=25˚C, 1 unit Mounted on ceramic board (750mm Mounted on ceramic board (750mm
2
×0.8mm) 1 unit
2
×0.8mm)
Continued on next page.
051V 02±V
2.1A
6W
5.1W 2W
˚C ˚C
52098HA (KT)/71095MO(KOTO) TA-0113 No.4890-1/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
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ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
ecnaticapaCtupnI
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
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emiTesiR
emiTyaleDFFO-nruT
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egatloVdrawroFedoiD
t
t
I
SSD)RB(
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
ssiCV
ssoCV
ssrCV
)no(d
t
r
)ffo(d
t
f
V
I
DS
D
SD SG SD
D
SD SD SD
S
FX607
sgnitaR
nimpytxam
V,Am1=
0=051V
SG
V,V051=
0=001Aµ
SG
V,V81±=
0=01±Aµ
SD
Am1=DI,V01=5.15.2V
Am006=8.01.1S
D V,Am006=
V01=6.12.2
SG
zHM1=f,V02=08Fp zHM1=f,V02=52Fp zHM1=f,V02=5.8Fp
tiucriCtseTdeificepseeS01sn tiucriCtseTdeificepseeS51sn tiucriCtseTdeificepseeS05sn tiucriCtseTdeificepseeS03sn
V,A2.1=
0=0.1V
SG
tinU
No.4890-2/4
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