Sanyo FX606 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4889
FX606
Features
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX606 is formed with two chips, each being
equivalent to the 2SK1470, placed in one package.
· Matched pair characteristics.
Switching Time Test Circuit
Package Dimensions
unit:mm
2120
[FX606]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
· Marking:606
D
PD
P
D
P
D
T
(Top view)
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %18A
Tc=25˚C, 1 unit
Mounted on ceramic board (750mm2×0.8mm) 1 unit
Mounted on ceramic board (750mm
2
×0.8mm)
Continued on next page.
06V
51±V
2A
6W
5.1W
2W
˚C
˚C
52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX606
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnI
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
emiTyaleDNO-nruT
emiTesiR
emiTyaleDFFO-nruT
emiTllaF
egatloVdrawroFedoiD
t
t
V
I
SSD)RB(
D
V
SSD
SSG
ssiCV
ssrCV
t
r
t
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
ssoCV
SD
SD
)no(d
)ffo(d
I
S
V,Am1=
0=06V
SG
V,V06=
0=001Aµ
SG
V,21±=
0=01±Aµ
SD
Am1=DI,V01=0.10.2V
A1=2.10.2S
D
V,A1=
V01=53.054.0
SG
V,A1=
V4=54.06.0
SG
zHM1=f,V02=051Fp
zHM1=f,V02=06Fp
zHM1=f,V02=21Fp
tiucriCtseTdeificepseeS6sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS02sn
V,A2.1=
0=0.1V
SG
sgnitaR
nimpytxam
tinU
Ω
Ω
No.4889-2/4
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