Sanyo FX606 Specifications
Ordering number:EN4889
FX606
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features |
Package Dimensions |
· Composite type composed of two low ON-resistance unit:mm
N-channel MOSFET chips for ultrahigh-speed |
2120 |
|
switching and low-voltage drive. |
||
|
·Facilitates high-density mounting.
·The FX606 is formed with two chips, each being equivalent to the 2SK1470, placed in one package.
·Matched pair characteristics.
[FX606]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6 (Bottom view)
Switching Time Test Circuit |
Electrical Connection |
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Drain-to-Source Voltage |
VDSS |
|
60 |
V |
Gate-to-Source Voltage |
VGSS |
|
±15 |
V |
Drain Current (DC) |
ID |
|
2 |
A |
Drain Current (Pulse) |
IDP |
PW≤10µs, duty cycle≤1% |
8 |
A |
Allowable Power Dissipation |
PD |
Tc=25˚C, 1 unit |
6 |
W |
|
PD |
Mounted on ceramic board (750mm2×0.8mm) 1 unit |
1.5 |
W |
Total Dissipation |
PT |
Mounted on ceramic board (750mm2×0.8mm) |
2 |
W |
Channel Temperature |
Tch |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
· Marking:606 |
|
|
Continued on next page. |
|
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4
FX606
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
min |
typ |
max |
|||||
|
|
|
|
||||
D-S Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
60 |
|
|
V |
|
Zero-Gate Voltage Drain Current |
IDSS |
VDS=60V, VGS=0 |
|
|
100 |
µA |
|
Gate-to-Source Leakage Current |
IGSS |
VGS=±12, VDS=0 |
|
|
±10 |
µA |
|
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
1.0 |
|
2.0 |
V |
|
Forward Transfer Admittance |
| Yfs | |
VDS=10V, ID=1A |
1.2 |
2.0 |
|
S |
|
Static Drain-to-Source ON-State Resistance |
RDS(on) |
ID=1A, VGS=10V |
|
0.35 |
0.45 |
Ω |
|
|
RDS(on) |
ID=1A, VGS=4V |
|
0.45 |
0.6 |
Ω |
|
Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
|
150 |
|
pF |
|
Output Capacitance |
Coss |
VDS=20V, f=1MHz |
|
60 |
|
pF |
|
Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
|
12 |
|
pF |
|
Turn-ON Delay Time |
td(on) |
See specified Test Circuit |
|
6 |
|
ns |
|
Rise Time |
tr |
See specified Test Circuit |
|
10 |
|
ns |
|
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit |
|
60 |
|
ns |
|
Fall Time |
tf |
See specified Test Circuit |
|
20 |
|
ns |
|
Diode Forward Voltage |
VSD |
IS=1.2A, VGS=0 |
|
1.0 |
|
V |
No.4889-2/4
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